auf Bestellung 1534 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 6.42 EUR |
| 10+ | 4.95 EUR |
| 100+ | 4.00 EUR |
| 500+ | 3.56 EUR |
| 1000+ | 3.04 EUR |
| 2000+ | 2.87 EUR |
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Technische Details PCDP0865G1_T0_00001 Panjit
Description: DIODE SIL CARB 650V 8A TO220AC, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 296pF @ 1V, 1MHz, Current - Average Rectified (Io): 8A, Supplier Device Package: TO-220AC, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A, Current - Reverse Leakage @ Vr: 60 µA @ 650 V.
Weitere Produktangebote PCDP0865G1_T0_00001 nach Preis ab 2.58 EUR bis 7.16 EUR
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PCDP0865G1_T0_00001 | Hersteller : Panjit International Inc. |
 Description: DIODE SIL CARB 650V 8A TO220ACPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 296pF @ 1V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Current - Reverse Leakage @ Vr: 60 µA @ 650 V |
auf Bestellung 1995 Stücke: Lieferzeit 10-14 Tag (e) |
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| PCDP0865G1_T0_00001 | Hersteller : PanJit Semiconductor |
PCDP0865G1-T0 THT Schottky diodes |
Produkt ist nicht verfügbar |