PCDP0865GB_T0_00601 Panjit International Inc.
Hersteller: Panjit International Inc.
Description: DIODE SIL CARB 650V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 372pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
| Anzahl | Preis |
|---|---|
| 3+ | 7.09 EUR |
| 50+ | 4.13 EUR |
| 100+ | 4.06 EUR |
| 500+ | 3.53 EUR |
| 1000+ | 3.45 EUR |
| 2000+ | 1.61 EUR |
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Technische Details PCDP0865GB_T0_00601 Panjit International Inc.
Description: DIODE SIL CARB 650V 8A TO220AC, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 372pF @ 1V, 1MHz, Current - Average Rectified (Io): 8A, Supplier Device Package: TO-220AC, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A, Current - Reverse Leakage @ Vr: 100 µA @ 650 V.
Weitere Produktangebote PCDP0865GB_T0_00601 nach Preis ab 4.12 EUR bis 7.11 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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PCDP0865GB_T0_00601 | Panjit |
SiC Schottky Diodes 650V SiC Schottky Barrier Diode |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PCDP0865GB_T0_00601 |
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Hersteller: Panjit
SiC Schottky Diodes 650V SiC Schottky Barrier Diode
SiC Schottky Diodes 650V SiC Schottky Barrier Diode
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 7.11 EUR |
| 10+ | 4.17 EUR |
| 100+ | 4.12 EUR |