PCDP0865GC_T0_00601 Panjit International Inc.
Hersteller: Panjit International Inc.
Description: DIODE SIL CARB 650V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 260pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
| Anzahl | Preis |
|---|---|
| 5+ | 4.38 EUR |
| 50+ | 2.17 EUR |
| 100+ | 1.96 EUR |
| 500+ | 1.63 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PCDP0865GC_T0_00601 Panjit International Inc.
Description: DIODE SIL CARB 650V 8A TO220AC, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 260pF @ 1V, 1MHz, Current - Average Rectified (Io): 8A, Supplier Device Package: TO-220AC, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A, Current - Reverse Leakage @ Vr: 100 µA @ 650 V.
Weitere Produktangebote PCDP0865GC_T0_00601 nach Preis ab 3.06 EUR bis 4.4 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||
|---|---|---|---|---|---|---|---|---|---|
 |
PCDP0865GC_T0_00601 | Panjit |
SiC Schottky Diodes 650V SiC Schottky Barrier Diode |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
|
| PCDP0865GC_T0_00601 |
|
Hersteller: Panjit
SiC Schottky Diodes 650V SiC Schottky Barrier Diode
SiC Schottky Diodes 650V SiC Schottky Barrier Diode
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.4 EUR |
| 10+ | 3.06 EUR |