PCDP0865GC_T0_00601 Panjit
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 6.20 EUR |
| 10+ | 5.23 EUR |
| 100+ | 4.21 EUR |
| 250+ | 3.98 EUR |
| 500+ | 3.73 EUR |
| 1000+ | 3.19 EUR |
| 2500+ | 3.03 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PCDP0865GC_T0_00601 Panjit
Description: DIODE SIL CARB 650V 8A TO220AC, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 260pF @ 1V, 1MHz, Current - Average Rectified (Io): 8A, Supplier Device Package: TO-220AC, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A, Current - Reverse Leakage @ Vr: 100 µA @ 650 V.
Weitere Produktangebote PCDP0865GC_T0_00601 nach Preis ab 2.97 EUR bis 8.18 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
PCDP0865GC_T0_00601 | Hersteller : Panjit International Inc. |
 Description: DIODE SIL CARB 650V 8A TO220ACPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 260pF @ 1V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A Current - Reverse Leakage @ Vr: 100 µA @ 650 V |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
PCDP0865GC-T0-00601 | Hersteller : Panjit |
Schottky Diodes & Rectifiers TO-220AC/SIC/TO/650SIC-SBD |
Produkt ist nicht verfügbar |