
auf Bestellung 1949 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 9.63 EUR |
10+ | 6.07 EUR |
100+ | 6.02 EUR |
500+ | 5.9 EUR |
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Technische Details PCDP10120G1_T0_00001 Panjit
Description: DIODE SIL CARB 1200V 10A TO220AC, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 529pF @ 1V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-220AC, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A, Current - Reverse Leakage @ Vr: 100 µA @ 1200 V.
Weitere Produktangebote PCDP10120G1_T0_00001 nach Preis ab 4.13 EUR bis 10.14 EUR
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PCDP10120G1_T0_00001 | Hersteller : Panjit International Inc. |
![]() Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 529pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
auf Bestellung 1968 Stücke: Lieferzeit 10-14 Tag (e) |
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PCDP10120G1_T0_00001 | Hersteller : PanJit Semiconductor |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220AC; Ufmax: 2V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 2V Max. load current: 76A Max. forward impulse current: 0.64kA Leakage current: 0.1mA Power dissipation: 151.5W Kind of package: tube Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PCDP10120G1_T0_00001 | Hersteller : PanJit Semiconductor |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220AC; Ufmax: 2V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 2V Max. load current: 76A Max. forward impulse current: 0.64kA Leakage current: 0.1mA Power dissipation: 151.5W Kind of package: tube |
Produkt ist nicht verfügbar |