Produkte > PANJIT > PCDP1065G1_T0_00001
PCDP1065G1_T0_00001

PCDP1065G1_T0_00001 Panjit


PCDP1065G1-1957479.pdf Hersteller: Panjit
Schottky Diodes & Rectifiers 650V SiC Schottky Barrier Diode
auf Bestellung 1990 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+5.23 EUR
10+ 4.35 EUR
100+ 3.47 EUR
1000+ 3.22 EUR
Produktrezensionen
Produktbewertung abgeben

Technische Details PCDP1065G1_T0_00001 Panjit

Description: DIODE SIL CARB 650V 10A TO220AC, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 364pF @ 1V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-220AC, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A, Current - Reverse Leakage @ Vr: 70 µA @ 650 V.

Weitere Produktangebote PCDP1065G1_T0_00001 nach Preis ab 3.47 EUR bis 6.71 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
PCDP1065G1_T0_00001 PCDP1065G1_T0_00001 Hersteller : Panjit International Inc. PCDP1065G1.pdf Description: DIODE SIL CARB 650V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 364pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 70 µA @ 650 V
auf Bestellung 1478 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+6.71 EUR
50+ 5.31 EUR
100+ 4.55 EUR
500+ 4.05 EUR
1000+ 3.47 EUR
Mindestbestellmenge: 3
PCDP1065G1_T0_00001 PCDP1065G1_T0_00001 Hersteller : PanJit Semiconductor PCDP1065G1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 83.3W; TO220AC
Power dissipation: 83.3W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Case: TO220AC
Max. off-state voltage: 650V
Max. load current: 44A
Max. forward voltage: 1.8V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 0.55kA
Leakage current: 70µA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PCDP1065G1-T0-00001 PCDP1065G1-T0-00001 Hersteller : Panjit PCDP1065G1-1957479.pdf Schottky Diodes & Rectifiers TO-220AC/SIC/TO/SIC-100WH
Produkt ist nicht verfügbar
PCDP1065G1_T0_00001 PCDP1065G1_T0_00001 Hersteller : PanJit Semiconductor PCDP1065G1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 83.3W; TO220AC
Power dissipation: 83.3W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Case: TO220AC
Max. off-state voltage: 650V
Max. load current: 44A
Max. forward voltage: 1.8V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 0.55kA
Leakage current: 70µA
Produkt ist nicht verfügbar