PCDP1065GB_T0_00601 Panjit
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 9.94 EUR |
| 10+ | 8.36 EUR |
| 100+ | 6.76 EUR |
| 250+ | 6.39 EUR |
| 500+ | 6.00 EUR |
| 1000+ | 5.14 EUR |
| 2500+ | 4.82 EUR |
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Technische Details PCDP1065GB_T0_00601 Panjit
Description: 650V SIC SCHOTTKY BARRIER DIODE, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 446pF @ 1V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-220AC, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A, Current - Reverse Leakage @ Vr: 100 µA @ 650 V.
Weitere Produktangebote PCDP1065GB_T0_00601 nach Preis ab 5.18 EUR bis 10.01 EUR
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PCDP1065GB_T0_00601 | Hersteller : Panjit International Inc. |
 Description: 650V SIC SCHOTTKY BARRIER DIODEPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 446pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 650 V |
auf Bestellung 1975 Stücke: Lieferzeit 10-14 Tag (e) |
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PCDP1065GB-T0-00601 | Hersteller : Panjit |
Schottky Diodes & Rectifiers TO-220AC/SIC/TO/650SIC-SBD |
Produkt ist nicht verfügbar |