PCDP1265G1_T0_00001 Panjit International Inc.
Hersteller: Panjit International Inc.Description: DIODE SIL CARB 650V 12A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 452pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 7.59 EUR |
| 10+ | 6.37 EUR |
| 100+ | 5.15 EUR |
| 500+ | 4.58 EUR |
| 1000+ | 3.92 EUR |
| 2000+ | 3.69 EUR |
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Technische Details PCDP1265G1_T0_00001 Panjit International Inc.
Description: DIODE SIL CARB 650V 12A TO220AC, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 452pF @ 1V, 1MHz, Current - Average Rectified (Io): 12A, Supplier Device Package: TO-220AC, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A, Current - Reverse Leakage @ Vr: 80 µA @ 650 V.
Weitere Produktangebote PCDP1265G1_T0_00001 nach Preis ab 3.75 EUR bis 7.71 EUR
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PCDP1265G1_T0_00001 | Hersteller : Panjit |
Schottky Diodes & Rectifiers 650V SiC Schottky Barrier Diode |
auf Bestellung 1994 Stücke: Lieferzeit 10-14 Tag (e) |
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| PCDP1265G1_T0_00001 | Hersteller : PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; 102.7W; TO220AC Power dissipation: 102.7W Technology: SiC Max. off-state voltage: 650V Load current: 12A Max. load current: 52A Kind of package: tube Semiconductor structure: single diode Leakage current: 80µA Case: TO220AC Type of diode: Schottky rectifying Mounting: THT Max. forward impulse current: 640A Max. forward voltage: 1.8V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| PCDP1265G1_T0_00001 | Hersteller : PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; 102.7W; TO220AC Power dissipation: 102.7W Technology: SiC Max. off-state voltage: 650V Load current: 12A Max. load current: 52A Kind of package: tube Semiconductor structure: single diode Leakage current: 80µA Case: TO220AC Type of diode: Schottky rectifying Mounting: THT Max. forward impulse current: 640A Max. forward voltage: 1.8V |
Produkt ist nicht verfügbar |