auf Bestellung 1994 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 6.04 EUR |
| 10+ | 3.47 EUR |
| 500+ | 3.45 EUR |
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Technische Details PCDP1265G1_T0_00001 Panjit
Description: DIODE SIL CARB 650V 12A TO220AC, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 452pF @ 1V, 1MHz, Current - Average Rectified (Io): 12A, Supplier Device Package: TO-220AC, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A, Current - Reverse Leakage @ Vr: 80 µA @ 650 V.
Weitere Produktangebote PCDP1265G1_T0_00001 nach Preis ab 3.69 EUR bis 7.59 EUR
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PCDP1265G1_T0_00001 | Hersteller : Panjit International Inc. |
 Description: DIODE SIL CARB 650V 12A TO220ACPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 452pF @ 1V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A Current - Reverse Leakage @ Vr: 80 µA @ 650 V |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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PCDP1265G1_T0_00001 | Hersteller : PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220AC; Ir: 80uA Case: TO220AC Kind of package: tube Type of diode: Schottky rectifying Semiconductor structure: single diode Mounting: THT Leakage current: 80µA Power dissipation: 102.7W Max. forward voltage: 1.8V Load current: 12A Max. load current: 52A Max. forward impulse current: 0.64kA Max. off-state voltage: 650V Technology: SiC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PCDP1265G1_T0_00001 | Hersteller : PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220AC; Ir: 80uA Case: TO220AC Kind of package: tube Type of diode: Schottky rectifying Semiconductor structure: single diode Mounting: THT Leakage current: 80µA Power dissipation: 102.7W Max. forward voltage: 1.8V Load current: 12A Max. load current: 52A Max. forward impulse current: 0.64kA Max. off-state voltage: 650V Technology: SiC |
Produkt ist nicht verfügbar |