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Technische Details PCDP1265G1_T0_00001 Panjit
Description: DIODE SIL CARB 650V 12A TO220AC, Current - Reverse Leakage @ Vr: 80 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A, Voltage - DC Reverse (Vr) (Max): 650 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-220AC, Current - Average Rectified (Io): 12A, Capacitance @ Vr, F: 452pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2, Packaging: Tube.
Weitere Produktangebote PCDP1265G1_T0_00001 nach Preis ab 3.69 EUR bis 7.59 EUR
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PCDP1265G1_T0_00001 | Panjit International Inc. |
 Description: DIODE SIL CARB 650V 12A TO220ACCurrent - Reverse Leakage @ Vr: 80 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A Voltage - DC Reverse (Vr) (Max): 650 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-220AC Current - Average Rectified (Io): 12A Capacitance @ Vr, F: 452pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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| PCDP1265G1_T0_00001 |
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Hersteller: Panjit International Inc.
Description: DIODE SIL CARB 650V 12A TO220AC
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 12A
Capacitance @ Vr, F: 452pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Description: DIODE SIL CARB 650V 12A TO220AC
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 12A
Capacitance @ Vr, F: 452pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 7.59 EUR |
| 10+ | 6.37 EUR |
| 100+ | 5.15 EUR |
| 500+ | 4.58 EUR |
| 1000+ | 3.92 EUR |
| 2000+ | 3.69 EUR |