PCDP20120G1_T0_00001 Panjit
auf Bestellung 1835 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 13.18 EUR |
| 50+ | 11.49 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PCDP20120G1_T0_00001 Panjit
Description: DIODE SIL CARB 1.2KV 20A TO220AC, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 1040pF @ 1V, 1MHz, Current - Average Rectified (Io): 20A, Supplier Device Package: TO-220AC, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A, Current - Reverse Leakage @ Vr: 180 µA @ 1200 V.
Weitere Produktangebote PCDP20120G1_T0_00001 nach Preis ab 11.12 EUR bis 13.27 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
 |
PCDP20120G1_T0_00001 | Hersteller : Panjit International Inc. |
 Description: DIODE SIL CARB 1.2KV 20A TO220ACPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1040pF @ 1V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A Current - Reverse Leakage @ Vr: 180 µA @ 1200 V |
auf Bestellung 1994 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||
 |
PCDP20120G1_T0_00001 | Hersteller : PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; 267.9W; TO220AC Technology: SiC Power dissipation: 267.9W Case: TO220AC Mounting: THT Kind of package: tube Semiconductor structure: single diode Max. off-state voltage: 1.2kV Type of diode: Schottky rectifying Max. load current: 152A Max. forward voltage: 2V Load current: 20A Max. forward impulse current: 960A Leakage current: 180µA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||
|
|
PCDP20120G1-T0-00001 | Hersteller : Panjit |
Schottky Diodes & Rectifiers TO-220AC/SIC/TO/SIC-200WH |
Produkt ist nicht verfügbar |
|||||||
|
|
PCDP20120G1_T0_00001 | Hersteller : PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; 267.9W; TO220AC Technology: SiC Power dissipation: 267.9W Case: TO220AC Mounting: THT Kind of package: tube Semiconductor structure: single diode Max. off-state voltage: 1.2kV Type of diode: Schottky rectifying Max. load current: 152A Max. forward voltage: 2V Load current: 20A Max. forward impulse current: 960A Leakage current: 180µA |
Produkt ist nicht verfügbar |