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PD57018STR-E STMicroelectronics
Hersteller: STMicroelectronics
Description: RF MOSFET LDMOS 28V POWERSO-10RF
Packaging: Tape & Reel (TR)
Package / Case: PowerSO-10 Exposed Bottom Pad
Current Rating (Amps): 2.5A
Frequency: 945MHz
Power - Output: 18W
Gain: 16.5dB
Technology: LDMOS
Supplier Device Package: PowerSO-10RF (Straight Lead)
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 100 mA
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Technische Details PD57018STR-E STMicroelectronics
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 65V; 2.5A; 31.7W; PowerSO10RF, Type of transistor: N-MOSFET, Case: PowerSO10RF, Mounting: SMD, Polarisation: unipolar, Drain current: 2.5A, Gate-source voltage: ±20V, Power dissipation: 31.7W, Drain-source voltage: 65V, Kind of package: reel; tape, Kind of channel: enhancement.
Weitere Produktangebote PD57018STR-E
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PD57018STR-E | Hersteller : STMicroelectronics |
Description: RF MOSFET LDMOS 28V POWERSO-10RF Packaging: Cut Tape (CT) Package / Case: PowerSO-10 Exposed Bottom Pad Current Rating (Amps): 2.5A Frequency: 945MHz Power - Output: 18W Gain: 16.5dB Technology: LDMOS Supplier Device Package: PowerSO-10RF (Straight Lead) Voltage - Rated: 65 V Voltage - Test: 28 V Current - Test: 100 mA |
Produkt ist nicht verfügbar |
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PD57018STR-E | Hersteller : STMicroelectronics |
RF MOSFET Transistors POWER R.F. |
Produkt ist nicht verfügbar |
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| PD57018STR-E | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 65V; 2.5A; 31.7W; PowerSO10RF Type of transistor: N-MOSFET Case: PowerSO10RF Mounting: SMD Polarisation: unipolar Drain current: 2.5A Gate-source voltage: ±20V Power dissipation: 31.7W Drain-source voltage: 65V Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |