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PD57018STR-E STMicroelectronics
Hersteller: STMicroelectronics
Description: RF MOSFET LDMOS 28V POWERSO-10RF
Packaging: Tape & Reel (TR)
Package / Case: PowerSO-10 Exposed Bottom Pad
Current Rating (Amps): 2.5A
Frequency: 945MHz
Power - Output: 18W
Gain: 16.5dB
Technology: LDMOS
Supplier Device Package: PowerSO-10RF (Straight Lead)
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 100 mA
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Technische Details PD57018STR-E STMicroelectronics
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 65V; 2.5A; 31.7W; PowerSO10RF, Type of transistor: N-MOSFET, Case: PowerSO10RF, Mounting: SMD, Polarisation: unipolar, Drain current: 2.5A, Gate-source voltage: ±20V, Power dissipation: 31.7W, Drain-source voltage: 65V, Kind of package: reel; tape, Kind of channel: enhancement.
Weitere Produktangebote PD57018STR-E
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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PD57018STR-E | STMicroelectronics |
Description: RF MOSFET LDMOS 28V POWERSO-10RF Current - Test: 100 mA Voltage - Test: 28 V Voltage - Rated: 65 V Supplier Device Package: PowerSO-10RF (Straight Lead) Technology: LDMOS Gain: 16.5dB Power - Output: 18W Frequency: 945MHz Current Rating (Amps): 2.5A Package / Case: PowerSO-10 Exposed Bottom Pad Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
PD57018STR-E | STMicroelectronics |
RF MOSFET Transistors POWER R.F. |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 600 Stücke Im Einkaufswagen Stück im Wert von UAH |
| PD57018STR-E | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 65V; 2.5A; 31.7W; PowerSO10RF Type of transistor: N-MOSFET Case: PowerSO10RF Mounting: SMD Polarisation: unipolar Drain current: 2.5A Gate-source voltage: ±20V Power dissipation: 31.7W Drain-source voltage: 65V Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| PD57018STR-E |
|
Hersteller: STMicroelectronics
Description: RF MOSFET LDMOS 28V POWERSO-10RF
Current - Test: 100 mA
Voltage - Test: 28 V
Voltage - Rated: 65 V
Supplier Device Package: PowerSO-10RF (Straight Lead)
Technology: LDMOS
Gain: 16.5dB
Power - Output: 18W
Frequency: 945MHz
Current Rating (Amps): 2.5A
Package / Case: PowerSO-10 Exposed Bottom Pad
Packaging: Cut Tape (CT)
Description: RF MOSFET LDMOS 28V POWERSO-10RF
Current - Test: 100 mA
Voltage - Test: 28 V
Voltage - Rated: 65 V
Supplier Device Package: PowerSO-10RF (Straight Lead)
Technology: LDMOS
Gain: 16.5dB
Power - Output: 18W
Frequency: 945MHz
Current Rating (Amps): 2.5A
Package / Case: PowerSO-10 Exposed Bottom Pad
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PD57018STR-E |
|
Hersteller: STMicroelectronics
RF MOSFET Transistors POWER R.F.
RF MOSFET Transistors POWER R.F.
Produkt ist nicht verfügbar
Mindestbestellmenge: 600 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PD57018STR-E |
|
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 2.5A; 31.7W; PowerSO10RF
Type of transistor: N-MOSFET
Case: PowerSO10RF
Mounting: SMD
Polarisation: unipolar
Drain current: 2.5A
Gate-source voltage: ±20V
Power dissipation: 31.7W
Drain-source voltage: 65V
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 2.5A; 31.7W; PowerSO10RF
Type of transistor: N-MOSFET
Case: PowerSO10RF
Mounting: SMD
Polarisation: unipolar
Drain current: 2.5A
Gate-source voltage: ±20V
Power dissipation: 31.7W
Drain-source voltage: 65V
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH