Technische Details PD57060-E STMicroelectronics
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; RF; 65V; 7A; 79W; PowerSO10RF; SMT, Type of transistor: N-MOSFET, Polarisation: unipolar, Kind of transistor: RF, Drain-source voltage: 65V, Drain current: 7A, Power dissipation: 79W, Case: PowerSO10RF, Gate-source voltage: ±20V, Kind of package: tube, Frequency: 945MHz, Kind of channel: enhancement, Output power: 60W, Electrical mounting: SMT, Open-loop gain: 14.3dB, Efficiency: 54%.
Weitere Produktangebote PD57060-E
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PD57060-E | Hersteller : STMicroelectronics |
 Trans RF MOSFET N-CH 65V 7A 3-Pin PowerSO-10RF (Formed lead) Tube |
Produkt ist nicht verfügbar |
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PD57060-E | Hersteller : STMicroelectronics |
Description: RF MOSFET LDMOS 28V POWERSO10 Current - Test: 100 mA Voltage - Test: 28 V Voltage - Rated: 65 V Part Status: Active Supplier Device Package: 10-PowerSO Technology: LDMOS Gain: 14.3dB Power - Output: 60W Frequency: 945MHz Current Rating (Amps): 7A Package / Case: PowerSO-10 Exposed Bottom Pad Packaging: Tube |
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PD57060-E | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; RF; 65V; 7A; 79W; PowerSO10RF; SMT Type of transistor: N-MOSFET Polarisation: unipolar Kind of transistor: RF Drain-source voltage: 65V Drain current: 7A Power dissipation: 79W Case: PowerSO10RF Gate-source voltage: ±20V Kind of package: tube Frequency: 945MHz Kind of channel: enhancement Output power: 60W Electrical mounting: SMT Open-loop gain: 14.3dB Efficiency: 54% |
Produkt ist nicht verfügbar |