Technische Details PD57060-E STMicroelectronics
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; RF; 65V; 7A; 79W; PowerSO10RF; SMT, Polarisation: unipolar, Case: PowerSO10RF, Kind of channel: enhancement, Type of transistor: N-MOSFET, Kind of package: tube, Kind of transistor: RF, Electrical mounting: SMT, Power dissipation: 79W, Drain current: 7A, Open-loop gain: 14.3dB, Gate-source voltage: ±20V, Efficiency: 54%, Output power: 60W, Drain-source voltage: 65V, Frequency: 945MHz.
Weitere Produktangebote PD57060-E
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
PD57060-E | STMicroelectronics |
 Trans RF MOSFET N-CH 65V 7A 3-Pin PowerSO-10RF (Formed lead) Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 400 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
PD57060-E | STMicroelectronics |
Description: RF MOSFET LDMOS 28V POWERSO10 Current - Test: 100 mA Voltage - Test: 28 V Voltage - Rated: 65 V Part Status: Active Supplier Device Package: 10-PowerSO Technology: LDMOS Gain: 14.3dB Power - Output: 60W Frequency: 945MHz Current Rating (Amps): 7A Package / Case: PowerSO-10 Exposed Bottom Pad Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
PD57060-E | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; RF; 65V; 7A; 79W; PowerSO10RF; SMT Polarisation: unipolar Case: PowerSO10RF Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: tube Kind of transistor: RF Electrical mounting: SMT Power dissipation: 79W Drain current: 7A Open-loop gain: 14.3dB Gate-source voltage: ±20V Efficiency: 54% Output power: 60W Drain-source voltage: 65V Frequency: 945MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| PD57060-E |
|
Hersteller: STMicroelectronics
Trans RF MOSFET N-CH 65V 7A 3-Pin PowerSO-10RF (Formed lead) Tube
Trans RF MOSFET N-CH 65V 7A 3-Pin PowerSO-10RF (Formed lead) Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 400 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PD57060-E |
|
Hersteller: STMicroelectronics
Description: RF MOSFET LDMOS 28V POWERSO10
Current - Test: 100 mA
Voltage - Test: 28 V
Voltage - Rated: 65 V
Part Status: Active
Supplier Device Package: 10-PowerSO
Technology: LDMOS
Gain: 14.3dB
Power - Output: 60W
Frequency: 945MHz
Current Rating (Amps): 7A
Package / Case: PowerSO-10 Exposed Bottom Pad
Packaging: Tube
Description: RF MOSFET LDMOS 28V POWERSO10
Current - Test: 100 mA
Voltage - Test: 28 V
Voltage - Rated: 65 V
Part Status: Active
Supplier Device Package: 10-PowerSO
Technology: LDMOS
Gain: 14.3dB
Power - Output: 60W
Frequency: 945MHz
Current Rating (Amps): 7A
Package / Case: PowerSO-10 Exposed Bottom Pad
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PD57060-E |
|
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; RF; 65V; 7A; 79W; PowerSO10RF; SMT
Polarisation: unipolar
Case: PowerSO10RF
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Kind of transistor: RF
Electrical mounting: SMT
Power dissipation: 79W
Drain current: 7A
Open-loop gain: 14.3dB
Gate-source voltage: ±20V
Efficiency: 54%
Output power: 60W
Drain-source voltage: 65V
Frequency: 945MHz
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; RF; 65V; 7A; 79W; PowerSO10RF; SMT
Polarisation: unipolar
Case: PowerSO10RF
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Kind of transistor: RF
Electrical mounting: SMT
Power dissipation: 79W
Drain current: 7A
Open-loop gain: 14.3dB
Gate-source voltage: ±20V
Efficiency: 54%
Output power: 60W
Drain-source voltage: 65V
Frequency: 945MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH