PD85006-E STMicroelectronics
Hersteller: STMicroelectronics
Description: RF MOSFET LDMOS 13.6V POWERSO10
Current - Test: 200 mA
Voltage - Test: 13.6 V
Voltage - Rated: 40 V
Supplier Device Package: 10-PowerSO
Technology: LDMOS
Gain: 17dB
Power - Output: 6W
Frequency: 870MHz
Current Rating (Amps): 2A
Package / Case: PowerSO-10 Exposed Bottom Pad
Packaging: Tube
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Technische Details PD85006-E STMicroelectronics
Description: RF MOSFET LDMOS 13.6V POWERSO10, Current - Test: 200 mA, Voltage - Test: 13.6 V, Voltage - Rated: 40 V, Supplier Device Package: 10-PowerSO, Technology: LDMOS, Gain: 17dB, Power - Output: 6W, Frequency: 870MHz, Current Rating (Amps): 2A, Package / Case: PowerSO-10 Exposed Bottom Pad, Packaging: Tube.
Weitere Produktangebote PD85006-E
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| PD85006-E | Hersteller : STMicroelectronics |
 RF MOSFET Transistors RF Power Transistor LdmoST N-ch Plastic |
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