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PDTA114EMB,315

PDTA114EMB,315 Nexperia USA Inc.

PDTA114EMB.pdf Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: DFN1006B-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Grade: Automotive
Qualification: AEC-Q100
Resistors Included: R1 and R2
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.06 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details PDTA114EMB,315 Nexperia USA Inc.

Description: TRANS PREBIAS PNP 50V 0.1A 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 1µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V, Supplier Device Package: DFN1006B-3, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 250 mW, Frequency - Transition: 180 MHz, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 10 kOhms, Grade: Automotive, Qualification: AEC-Q100, Resistors Included: R1 and R2.

Weitere Produktangebote PDTA114EMB,315 nach Preis ab 0.05 EUR bis 0.35 EUR

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Preis
PDTA114EMB,315 PDTA114EMB,315 Hersteller : Nexperia PDTA114EMB.pdf Digital Transistors PDTA114EMB/SOT883B/XQFN3
auf Bestellung 8873 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+0.32 EUR
14+0.21 EUR
100+0.09 EUR
1000+0.07 EUR
2500+0.07 EUR
10000+0.06 EUR
20000+0.05 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
PDTA114EMB,315 PDTA114EMB,315 Hersteller : Nexperia USA Inc. PDTA114EMB.pdf Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: DFN1006B-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Grade: Automotive
Qualification: AEC-Q100
Resistors Included: R1 and R2
auf Bestellung 14935 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
50+0.35 EUR
81+0.22 EUR
130+0.14 EUR
500+0.10 EUR
1000+0.09 EUR
2000+0.08 EUR
5000+0.07 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
PDTA114EMB,315 PDTA114EMB,315 Hersteller : NEXPERIA pdta114emb.pdf Trans Digital BJT PNP 50V 100mA 250mW Automotive 3-Pin DFN-B T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PDTA114EMB,315 PDTA114EMB,315 Hersteller : Nexperia pdta114emb.pdf Trans Digital BJT PNP 50V 0.1A 250mW 3-Pin DFN-B T/R Automotive AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH