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PDTA114EMB,315

PDTA114EMB,315 Nexperia USA Inc.

PDTA114EMB.pdf Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: DFN1006B-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q100
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10000+0.057 EUR
Mindestbestellmenge: 10000
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Technische Details PDTA114EMB,315 Nexperia USA Inc.

Description: TRANS PREBIAS PNP 50V 0.1A 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 1µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V, Supplier Device Package: DFN1006B-3, Grade: Automotive, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 250 mW, Frequency - Transition: 180 MHz, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 10 kOhms, Qualification: AEC-Q100.

Weitere Produktangebote PDTA114EMB,315 nach Preis ab 0.055 EUR bis 0.44 EUR

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PDTA114EMB,315 PDTA114EMB,315 Hersteller : Nexperia PDTA114EMB-2938396.pdf Digital Transistors PDTA114EMB/SOT883B/XQFN3
auf Bestellung 9973 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+0.44 EUR
10+ 0.31 EUR
100+ 0.13 EUR
1000+ 0.076 EUR
2500+ 0.069 EUR
10000+ 0.058 EUR
20000+ 0.055 EUR
Mindestbestellmenge: 7
PDTA114EMB,315 PDTA114EMB,315 Hersteller : Nexperia USA Inc. PDTA114EMB.pdf Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: DFN1006B-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q100
auf Bestellung 14950 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
40+0.44 EUR
58+ 0.31 EUR
119+ 0.15 EUR
500+ 0.12 EUR
1000+ 0.086 EUR
2000+ 0.075 EUR
5000+ 0.069 EUR
Mindestbestellmenge: 40
PDTA114EMB,315 PDTA114EMB,315 Hersteller : NEXPERIA pdta114emb.pdf Trans Digital BJT PNP 50V 100mA 250mW Automotive 3-Pin DFN-B T/R
Produkt ist nicht verfügbar
PDTA114EMB,315 PDTA114EMB,315 Hersteller : Nexperia pdta114emb.pdf Trans Digital BJT PNP 50V 100mA 250mW Automotive 3-Pin DFN-B T/R
Produkt ist nicht verfügbar