PDTA114EQCZ Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 180 MHz
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 5000+ | 0.081 EUR |
| 10000+ | 0.072 EUR |
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Technische Details PDTA114EQCZ Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN, Resistors Included: R1 and R2, Resistor - Emitter Base (R2): 10 kOhms, Resistor - Base (R1): 10 kOhms, Frequency - Transition: 180 MHz, Power - Max: 360 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Part Status: Active, Supplier Device Package: DFN1412D-3, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V, Current - Collector Cutoff (Max): 100nA, Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA, Transistor Type: PNP - Pre-Biased, Mounting Type: Surface Mount, Wettable Flank, Package / Case: 3-XDFN Exposed Pad, Packaging: Tape & Reel (TR).
Weitere Produktangebote PDTA114EQCZ nach Preis ab 0.076 EUR bis 0.42 EUR
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PDTA114EQCZ | Hersteller : Nexperia |
Digital Transistors The factory is currently not accepting orders for this product. |
auf Bestellung 4900 Stücke: Lieferzeit 10-14 Tag (e) |
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PDTA114EQCZ | Hersteller : Nexperia USA Inc. |
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN Resistors Included: R1 and R2 Resistor - Base (R1): 10 kOhms Frequency - Transition: 180 MHz Power - Max: 360 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: DFN1412D-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount, Wettable Flank Package / Case: 3-XDFN Exposed Pad Packaging: Cut Tape (CT) Resistor - Emitter Base (R2): 10 kOhms |
auf Bestellung 24970 Stücke: Lieferzeit 10-14 Tag (e) |
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