PDTA114ET-QR Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V TO236AB
Qualification: AEC-Q101
Grade: Automotive
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 180 MHz
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-236AB
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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Technische Details PDTA114ET-QR Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V TO236AB, Qualification: AEC-Q101, Grade: Automotive, Resistor - Emitter Base (R2): 10 kOhms, Resistor - Base (R1): 10 kOhms, Frequency - Transition: 180 MHz, Power - Max: 250 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Part Status: Active, Supplier Device Package: TO-236AB, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V, Current - Collector Cutoff (Max): 1µA, Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA, Transistor Type: PNP - Pre-Biased, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
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PDTA114ET-QR | Hersteller : Nexperia |
Digital Transistors SOT23 50V .1A PNP RET |
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| PDTA114ET-QR | Hersteller : NEXPERIA |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.25W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SOT23; TO236AB Mounting: SMD Kind of package: 7 inch reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ Application: automotive industry Frequency: 180MHz |
Produkt ist nicht verfügbar |