PDTA115EU-QX Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: PDTA115EU-Q/SOT323/SC-70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Current - Collector (Ic) (Max): 20 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
Qualification: AEC-Q101
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Technische Details PDTA115EU-QX Nexperia USA Inc.
Description: PDTA115EU-Q/SOT323/SC-70, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V, Supplier Device Package: SOT-323, Grade: Automotive, Current - Collector (Ic) (Max): 20 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Resistor - Base (R1): 100 kOhms, Resistor - Emitter Base (R2): 100 kOhms, Qualification: AEC-Q101.
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PDTA115EU-QX | Hersteller : Nexperia |
Bipolar Transistors - BJT PNP resistor-equipped transistors; R1 = 100 kOhm, R2 = open |
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