PDTA123JQC-QZ Nexperia
| Anzahl | Privatkunde |
|---|---|
| 2833+ | 0.061 EUR |
| 2866+ | 0.06 EUR |
| 4033+ | 0.042 EUR |
| 5556+ | 0.03 EUR |
| 7408+ | 0.021 EUR |
| 8696+ | 0.018 EUR |
| 15000+ | 0.017 EUR |
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Technische Details PDTA123JQC-QZ Nexperia
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN, Resistors Included: R1 and R2, Qualification: AEC-Q101, Grade: Automotive, Resistor - Emitter Base (R2): 47 kOhms, Resistor - Base (R1): 2.2 kOhms, Frequency - Transition: 180 MHz, Power - Max: 360 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Part Status: Active, Supplier Device Package: DFN1412D-3, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V, Current - Collector Cutoff (Max): 100nA, Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA, Transistor Type: PNP - Pre-Biased, Mounting Type: Surface Mount, Wettable Flank, Package / Case: 3-XDFN Exposed Pad, Packaging: Tape & Reel (TR).
Weitere Produktangebote PDTA123JQC-QZ nach Preis ab 0.018 EUR bis 0.48 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||||
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PDTA123JQC-QZ | Nexperia USA Inc. |
Description: TRANS PREBIAS PNP 50V 0.1A 3DFNResistors Included: R1 and R2 Qualification: AEC-Q101 Grade: Automotive Resistor - Emitter Base (R2): 47 kOhms Resistor - Base (R1): 2.2 kOhms Frequency - Transition: 180 MHz Power - Max: 360 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: DFN1412D-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount, Wettable Flank Package / Case: 3-XDFN Exposed Pad Packaging: Tape & Reel (TR) |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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PDTA123JQC-QZ | Nexperia |
Trans Digital BJT PNP 50V 0.1mA 450mW 3-Pin DFN-D T/R Automotive AEC-Q101 |
auf Bestellung 24800 Stücke: Lieferzeit 14-21 Tag (e) |
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PDTA123JQC-QZ | Nexperia |
Digital Transistors PDTA123JQC-Q/SOT8009/DFN1412D- |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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PDTA123JQC-QZ | Nexperia USA Inc. |
Description: TRANS PREBIAS PNP 50V 0.1A 3DFNResistors Included: R1 and R2 Qualification: AEC-Q101 Grade: Automotive Power - Max: 360 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: DFN1412D-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount, Wettable Flank Package / Case: 3-XDFN Exposed Pad Packaging: Cut Tape (CT) Resistor - Emitter Base (R2): 47 kOhms Resistor - Base (R1): 2.2 kOhms Frequency - Transition: 180 MHz |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
|
| PDTA123JQC-QZ |
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Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Resistors Included: R1 and R2
Qualification: AEC-Q101
Grade: Automotive
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 180 MHz
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Resistors Included: R1 and R2
Qualification: AEC-Q101
Grade: Automotive
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 180 MHz
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5000+ | 0.084 EUR |
| PDTA123JQC-QZ |
![]() |
Hersteller: Nexperia
Trans Digital BJT PNP 50V 0.1mA 450mW 3-Pin DFN-D T/R Automotive AEC-Q101
Trans Digital BJT PNP 50V 0.1mA 450mW 3-Pin DFN-D T/R Automotive AEC-Q101
auf Bestellung 24800 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1061+ | 0.17 EUR |
| 1710+ | 0.098 EUR |
| 1728+ | 0.093 EUR |
| 1746+ | 0.088 EUR |
| 2833+ | 0.052 EUR |
| 2866+ | 0.049 EUR |
| 4033+ | 0.033 EUR |
| 5556+ | 0.024 EUR |
| 7408+ | 0.018 EUR |
| PDTA123JQC-QZ |
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Hersteller: Nexperia
Digital Transistors PDTA123JQC-Q/SOT8009/DFN1412D-
Digital Transistors PDTA123JQC-Q/SOT8009/DFN1412D-
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 0.3 EUR |
| 17+ | 0.2 EUR |
| 100+ | 0.1 EUR |
| 1000+ | 0.088 EUR |
| 5000+ | 0.061 EUR |
| 10000+ | 0.058 EUR |
| 25000+ | 0.055 EUR |
| PDTA123JQC-QZ |
![]() |
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Resistors Included: R1 and R2
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 180 MHz
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Resistors Included: R1 and R2
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 180 MHz
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 44+ | 0.48 EUR |
| 73+ | 0.29 EUR |
| 118+ | 0.18 EUR |
| 500+ | 0.13 EUR |
| 1000+ | 0.12 EUR |
| 2000+ | 0.1 EUR |




