
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
---|---|
2924+ | 0.05 EUR |
3031+ | 0.05 EUR |
3145+ | 0.05 EUR |
3268+ | 0.04 EUR |
3402+ | 0.04 EUR |
6000+ | 0.04 EUR |
15000+ | 0.03 EUR |
30000+ | 0.03 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PDTA143XQCZ Nexperia
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-XDFN Exposed Pad, Mounting Type: Surface Mount, Wettable Flank, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V, Supplier Device Package: DFN1412D-3, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 360 mW, Frequency - Transition: 180 MHz, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 10 kOhms, Resistors Included: R1 and R2.
Weitere Produktangebote PDTA143XQCZ nach Preis ab 0.04 EUR bis 0.35 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
PDTA143XQCZ | Hersteller : Nexperia |
![]() |
auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||||
![]() |
PDTA143XQCZ | Hersteller : Nexperia |
![]() |
auf Bestellung 55000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||||
![]() |
PDTA143XQCZ | Hersteller : Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Supplier Device Package: DFN1412D-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 360 mW Frequency - Transition: 180 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms Resistors Included: R1 and R2 |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||||
![]() |
PDTA143XQCZ | Hersteller : Nexperia |
![]() |
auf Bestellung 14985 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||||
![]() |
PDTA143XQCZ | Hersteller : Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Supplier Device Package: DFN1412D-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 360 mW Frequency - Transition: 180 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms Resistors Included: R1 and R2 |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
|