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PDTA144ET-QR

PDTA144ET-QR Nexperia USA Inc.


Hersteller: Nexperia USA Inc.
Description: PDTA144ET-Q/SOT23/TO-236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: TO-236AB
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
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Technische Details PDTA144ET-QR Nexperia USA Inc.

Description: PDTA144ET-Q/SOT23/TO-236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V, Supplier Device Package: TO-236AB, Grade: Automotive, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 250 mW, Frequency - Transition: 180 MHz, Resistor - Base (R1): 47 kOhms, Resistor - Emitter Base (R2): 47 kOhms, Qualification: AEC-Q101, Resistors Included: R1 and R2.

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PDTA144ET-QR Hersteller : Nexperia Bipolar Transistors - BJT PDTA144ET-Q/SOT23/TO-236AB
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