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PDTB123TT,215

PDTB123TT,215 NEXPERIA

PDTB123TT.pdf Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Anzahl je Verpackung: 20 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
1100+0.066 EUR
1220+ 0.059 EUR
1660+ 0.043 EUR
1760+ 0.041 EUR
Mindestbestellmenge: 1100
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Technische Details PDTB123TT,215 NEXPERIA

Description: TRANS PREBIAS PNP 50V TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V, Supplier Device Package: TO-236AB, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 250 mW, Resistor - Base (R1): 2.2 kOhms.

Weitere Produktangebote PDTB123TT,215 nach Preis ab 0.041 EUR bis 0.75 EUR

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Preis ohne MwSt
PDTB123TT,215 PDTB123TT,215 Hersteller : NEXPERIA PDTB123TT.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1100+0.066 EUR
1220+ 0.059 EUR
1660+ 0.043 EUR
1760+ 0.041 EUR
Mindestbestellmenge: 1100
PDTB123TT,215 PDTB123TT,215 Hersteller : Nexperia USA Inc. PDTB123TT.pdf Description: TRANS PREBIAS PNP 50V TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
Supplier Device Package: TO-236AB
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 2.2 kOhms
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
35+0.51 EUR
42+ 0.42 EUR
100+ 0.23 EUR
500+ 0.15 EUR
1000+ 0.1 EUR
Mindestbestellmenge: 35
PDTB123TT,215 PDTB123TT,215 Hersteller : Nexperia PDTB123TT-2938356.pdf Digital Transistors PDTB123TT/SOT23/TO-236AB
auf Bestellung 8020 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
70+0.75 EUR
102+ 0.51 EUR
244+ 0.21 EUR
1000+ 0.13 EUR
3000+ 0.099 EUR
9000+ 0.078 EUR
24000+ 0.075 EUR
Mindestbestellmenge: 70
PDTB123TT,215 PDTB123TT,215 Hersteller : NEXPERIA 183115437485842pdtb123tt.pdfcidbrand_nxpdatafeed-web_third_part.pdfcidbrand_nxpd.pdf Trans Digital BJT PNP 50V 500mA 250mW Automotive 3-Pin SOT-23 T/R
auf Bestellung 24000 Stücke:
Lieferzeit 14-21 Tag (e)
PDTB123TT,215 PDTB123TT,215 Hersteller : Nexperia USA Inc. PDTB123TT.pdf Description: TRANS PREBIAS PNP 50V TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
Supplier Device Package: TO-236AB
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 2.2 kOhms
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