
PDTB123TT,215 NEXPERIA

Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Mounting: SMD
Collector current: 0.5A
Power dissipation: 0.25W
Current gain: 100...250
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Case: SOT23; TO236AB
Kind of package: 7 inch reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2380 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis |
---|---|
334+ | 0.21 EUR |
527+ | 0.14 EUR |
806+ | 0.089 EUR |
1651+ | 0.043 EUR |
1749+ | 0.041 EUR |
75000+ | 0.039 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PDTB123TT,215 NEXPERIA
Description: TRANS PREBIAS PNP 50V TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V, Supplier Device Package: TO-236AB, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 250 mW, Resistor - Base (R1): 2.2 kOhms.
Weitere Produktangebote PDTB123TT,215 nach Preis ab 0.041 EUR bis 0.51 EUR
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PDTB123TT,215 | Hersteller : NEXPERIA |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 250mW; SOT23,TO236AB Type of transistor: PNP Mounting: SMD Collector current: 0.5A Power dissipation: 0.25W Current gain: 100...250 Collector-emitter voltage: 50V Base resistor: 2.2kΩ Case: SOT23; TO236AB Kind of package: 7 inch reel; tape Polarisation: bipolar Kind of transistor: BRT |
auf Bestellung 2380 Stücke: Lieferzeit 14-21 Tag (e) |
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PDTB123TT,215 | Hersteller : Nexperia |
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auf Bestellung 6935 Stücke: Lieferzeit 10-14 Tag (e) |
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PDTB123TT,215 | Hersteller : Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V Supplier Device Package: TO-236AB Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Resistor - Base (R1): 2.2 kOhms |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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PDTB123TT,215 | Hersteller : NEXPERIA |
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auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) |
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PDTB123TT,215 | Hersteller : Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V Supplier Device Package: TO-236AB Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Resistor - Base (R1): 2.2 kOhms |
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