PDTB143ETR

PDTB143ETR Nexperia USA Inc.


PDTB1XXXT_SER.pdf Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 140 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.085 EUR
Mindestbestellmenge: 3000
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Produktbewertung abgeben

Technische Details PDTB143ETR Nexperia USA Inc.

Description: TRANS PREBIAS PNP 50V TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V, Supplier Device Package: TO-236AB, Part Status: Active, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 320 mW, Frequency - Transition: 140 MHz, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 4.7 kOhms, Grade: Automotive, Qualification: AEC-Q100.

Weitere Produktangebote PDTB143ETR nach Preis ab 0.073 EUR bis 0.51 EUR

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Preis ohne MwSt
PDTB143ETR PDTB143ETR Hersteller : NEXPERIA PDTB1XXXT_SER.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; SOT23,TO236AB; R1: 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Anzahl je Verpackung: 5 Stücke
auf Bestellung 810 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
570+0.13 EUR
810+ 0.089 EUR
975+ 0.073 EUR
Mindestbestellmenge: 570
PDTB143ETR PDTB143ETR Hersteller : NEXPERIA PDTB1XXXT_SER.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; SOT23,TO236AB; R1: 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
auf Bestellung 810 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
570+0.13 EUR
810+ 0.089 EUR
Mindestbestellmenge: 570
PDTB143ETR PDTB143ETR Hersteller : Nexperia USA Inc. PDTB1XXXT_SER.pdf Description: TRANS PREBIAS PNP 50V TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 140 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 6061 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
35+0.51 EUR
51+ 0.44 EUR
104+ 0.21 EUR
500+ 0.18 EUR
1000+ 0.12 EUR
Mindestbestellmenge: 35
PDTB143ETR PDTB143ETR Hersteller : NEXPERIA 2589718408349206pdtb1xxxt_ser.pdf Trans Digital BJT PNP 50V 500mA 460mW Automotive 3-Pin SOT-23 T/R
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PDTB143ETR PDTB143ETR Hersteller : Nexperia PDTB1XXXT_SER-2938398.pdf Bipolar Transistors - Pre-Biased PDTB143ET/SOT23/TO-236AB
Produkt ist nicht verfügbar