PDTC114ET-QVL Nexperia
auf Bestellung 70000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 11195+ | 0.05 EUR |
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Technische Details PDTC114ET-QVL Nexperia
Description: TRANS PREBIAS NPN 50V TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 1µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V, Supplier Device Package: TO-236AB, Grade: Automotive, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 250 mW, Frequency - Transition: 230 MHz, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 10 kOhms, Qualification: AEC-Q101, Resistors Included: R1 and R2.
Weitere Produktangebote PDTC114ET-QVL nach Preis ab 0.02 EUR bis 0.22 EUR
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PDTC114ET-QVL | Hersteller : NEXPERIA |
 Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 250mW; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SOT23; TO236AB Current gain: 30 Mounting: SMD Kind of package: 11 inch reel; tape Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 10kΩ Anzahl je Verpackung: 1 Stücke |
auf Bestellung 9375 Stücke: Lieferzeit 7-14 Tag (e) |
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PDTC114ET-QVL | Hersteller : NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 250mW; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SOT23; TO236AB Current gain: 30 Mounting: SMD Kind of package: 11 inch reel; tape Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 10kΩ |
auf Bestellung 9375 Stücke: Lieferzeit 14-21 Tag (e) |
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PDTC114ET-QVL | Hersteller : Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 50V TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Supplier Device Package: TO-236AB Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 230 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
auf Bestellung 7934 Stücke: Lieferzeit 10-14 Tag (e) |
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PDTC114ET-QVL | Hersteller : Nexperia |
Digital Transistors PDTC114ET-Q/SOT23/TO-236AB |
auf Bestellung 39616 Stücke: Lieferzeit 10-14 Tag (e) |
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PDTC114ET-QVL | Hersteller : Nexperia |
Trans Digital BJT NPN 50V 0.1A 250mW 3-Pin SOT-23 T/R Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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PDTC114ET-QVL | Hersteller : NEXPERIA |
Trans Digital BJT NPN 50V 100mA 250mW |
Produkt ist nicht verfügbar |
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PDTC114ET-QVL | Hersteller : Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 50V TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Supplier Device Package: TO-236AB Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 230 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
Produkt ist nicht verfügbar |