
auf Bestellung 7039 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
8+ | 0.40 EUR |
12+ | 0.24 EUR |
100+ | 0.10 EUR |
1000+ | 0.08 EUR |
2500+ | 0.07 EUR |
10000+ | 0.05 EUR |
50000+ | 0.05 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PDTC114YM,315 Nexperia
Description: TRANS PREBIAS NPN 50V SOT883, Packaging: Tape & Reel (TR), Package / Case: SC-101, SOT-883, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 1µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V, Supplier Device Package: SOT-883, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 250 mW, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 47 kOhms, Resistors Included: R1 and R2.
Weitere Produktangebote PDTC114YM,315 nach Preis ab 0.08 EUR bis 0.40 EUR
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PDTC114YM,315 | Hersteller : Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V Supplier Device Package: SOT-883 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms Resistors Included: R1 and R2 |
auf Bestellung 9389 Stücke: Lieferzeit 10-14 Tag (e) |
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PDTC114YM,315 | Hersteller : NEXPERIA |
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Produkt ist nicht verfügbar |
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PDTC114YM,315 | Hersteller : Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V Supplier Device Package: SOT-883 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms Resistors Included: R1 and R2 |
Produkt ist nicht verfügbar |