PDTC115EMB,315 NXP Semiconductors
Hersteller: NXP SemiconductorsDescription: TRANS PREBIAS NPN 50V 0.02A 3DFN
Packaging: Bulk
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: DFN1006B-3
Current - Collector (Ic) (Max): 20 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
Resistors Included: R1 and R2
auf Bestellung 180000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 11225+ | 0.051 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PDTC115EMB,315 NXP Semiconductors
Description: TRANS PREBIAS NPN 50V 0.02A 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 1µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V, Supplier Device Package: DFN1006B-3, Grade: Automotive, Current - Collector (Ic) (Max): 20 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 250 mW, Frequency - Transition: 230 MHz, Resistor - Base (R1): 100 kOhms, Resistor - Emitter Base (R2): 100 kOhms, Qualification: AEC-Q100.
Weitere Produktangebote PDTC115EMB,315 nach Preis ab 0.051 EUR bis 0.45 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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PDTC115EMB,315 | Hersteller : Nexperia USA Inc. |
Description: TRANS PREBIAS NPN Packaging: Bulk |
auf Bestellung 70000 Stücke: Lieferzeit 10-14 Tag (e) |
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PDTC115EMB,315 | Hersteller : Nexperia |
Trans Digital BJT NPN 50V 0.02A 250mW 3-Pin DFN-B T/R Automotive AEC-Q101 |
auf Bestellung 79890 Stücke: Lieferzeit 14-21 Tag (e) |
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PDTC115EMB,315 | Hersteller : Nexperia |
Digital Transistors PDTC115EMB/SOT883B/XQFN3 |
auf Bestellung 6127 Stücke: Lieferzeit 10-14 Tag (e) |
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| PDTC115EMB,315 | Hersteller : NXP Semiconductors |
Trans Digital BJT NPN 50V 20mA 250mW Automotive 3-Pin DFN-B T/R |
auf Bestellung 9658 Stücke: Lieferzeit 14-21 Tag (e) |
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| PDTC115EMB,315 | Hersteller : NXP Semiconductors |
Trans Digital BJT NPN 50V 20mA 250mW Automotive 3-Pin DFN-B T/R |
auf Bestellung 180000 Stücke: Lieferzeit 14-21 Tag (e) |
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| PDTC115EMB,315 | Hersteller : NEXPERIA |
Description: NEXPERIA - PDTC115EMB,315 - SCHOTTKY RECTIFIER DIODES tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 79890 Stücke: Lieferzeit 14-21 Tag (e) |
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| PDTC115EMB,315 | Hersteller : NXP |
Description: NXP - PDTC115EMB,315 - SCHOTTKY RECTIFIER DIODES tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 79890 Stücke: Lieferzeit 14-21 Tag (e) |
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PDTC115EMB,315 | Hersteller : Nexperia |
Trans Digital BJT NPN 50V 0.02mA 250mW 3-Pin DFN-B T/R Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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PDTC115EMB,315 | Hersteller : Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 50V 0.02A 3DFN Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V Supplier Device Package: DFN1006B-3 Grade: Automotive Current - Collector (Ic) (Max): 20 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 230 MHz Resistor - Base (R1): 100 kOhms Resistor - Emitter Base (R2): 100 kOhms Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |