PDTC115TMB,315 Nexperia USA Inc.
auf Bestellung 70000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 11225+ | 0.05 EUR |
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Technische Details PDTC115TMB,315 Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 1µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V, Supplier Device Package: DFN1006B-3, Grade: Automotive, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 250 mW, Frequency - Transition: 230 MHz, Resistor - Base (R1): 100 kOhms, Qualification: AEC-Q100.
Weitere Produktangebote PDTC115TMB,315
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| PDTC115TMB,315 | Hersteller : NEXPERIA |
 Description: NEXPERIA - PDTC115TMB,315 - SCHOTTKY RECTIFIER DIODEStariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 70000 Stücke: Lieferzeit 14-21 Tag (e) |
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PDTC115TMB,315 | Hersteller : Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Supplier Device Package: DFN1006B-3 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 230 MHz Resistor - Base (R1): 100 kOhms Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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PDTC115TMB,315 | Hersteller : Nexperia |
Digital Transistors PDTC115TMB/SOT883B/XQFN3 |
Produkt ist nicht verfügbar |