PDTC123JMB,315 Nexperia
Hersteller: Nexperia
Digital Transistors The factory is currently not accepting orders for this product.
| Anzahl | Privatkunde |
|---|---|
| 9+ | 0.42 EUR |
| 14+ | 0.25 EUR |
| 100+ | 0.15 EUR |
| 500+ | 0.12 EUR |
| 1000+ | 0.092 EUR |
| 5000+ | 0.08 EUR |
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Produktbewertung abgeben
Technische Details PDTC123JMB,315 Nexperia
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN, Resistors Included: R1 and R2, Qualification: AEC-Q100, Grade: Automotive, Resistor - Emitter Base (R2): 47 kOhms, Resistor - Base (R1): 2.2 kOhms, Frequency - Transition: 230 MHz, Power - Max: 250 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Part Status: Active, Supplier Device Package: DFN1006B-3, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V, Current - Collector Cutoff (Max): 1µA, Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: 3-XFDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote PDTC123JMB,315 nach Preis ab 0.077 EUR bis 0.42 EUR
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PDTC123JMB,315 | Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN Resistors Included: R1 and R2 Qualification: AEC-Q100 Grade: Automotive Package / Case: 3-XFDFN Packaging: Cut Tape (CT) Resistor - Emitter Base (R2): 47 kOhms Resistor - Base (R1): 2.2 kOhms Frequency - Transition: 230 MHz Power - Max: 250 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: DFN1006B-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Current - Collector Cutoff (Max): 1µA Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount |
auf Bestellung 7357 Stücke: Lieferzeit 10-14 Tag (e) |
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| PDTC123JMB,315 | NXP Semiconductors |
Trans Digital BJT NPN 50V 100mA 250mW Automotive 3-Pin DFN-B T/R |
auf Bestellung 156576 Stücke: Lieferzeit 14-21 Tag (e) |
|
| PDTC123JMB,315 |
|
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Resistors Included: R1 and R2
Qualification: AEC-Q100
Grade: Automotive
Package / Case: 3-XFDFN
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 230 MHz
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1006B-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Resistors Included: R1 and R2
Qualification: AEC-Q100
Grade: Automotive
Package / Case: 3-XFDFN
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 230 MHz
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1006B-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
auf Bestellung 7357 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 50+ | 0.42 EUR |
| 83+ | 0.25 EUR |
| 133+ | 0.15 EUR |
| 500+ | 0.12 EUR |
| 1000+ | 0.1 EUR |
| 2000+ | 0.09 EUR |
| 5000+ | 0.077 EUR |
| PDTC123JMB,315 |
|
Hersteller: NXP Semiconductors
Trans Digital BJT NPN 50V 100mA 250mW Automotive 3-Pin DFN-B T/R
Trans Digital BJT NPN 50V 100mA 250mW Automotive 3-Pin DFN-B T/R
auf Bestellung 156576 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5301+ | 0.12 EUR |
| 10000+ | 0.11 EUR |
| 100000+ | 0.089 EUR |