PDTC123YQB-QZ Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: PDTC123YQB-Q/SOT8015/DFN1110D-
Resistors Included: R1 and R2
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 230 MHz
Power - Max: 340 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Grade: Automotive
Supplier Device Package: DFN1110D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
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Technische Details PDTC123YQB-QZ Nexperia USA Inc.
Description: PDTC123YQB-Q/SOT8015/DFN1110D-, Resistors Included: R1 and R2, Qualification: AEC-Q101, Resistor - Emitter Base (R2): 10 kOhms, Resistor - Base (R1): 2.2 kOhms, Frequency - Transition: 230 MHz, Power - Max: 340 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Grade: Automotive, Supplier Device Package: DFN1110D-3, DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V, Current - Collector Cutoff (Max): 100nA, Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Wettable Flank, Package / Case: 3-XDFN Exposed Pad, Packaging: Tape & Reel (TR).
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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PDTC123YQB-QZ | Hersteller : Nexperia |
Digital Transistors 50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2: 10 kΩ |
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