
auf Bestellung 4948 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
6+ | 0.54 EUR |
10+ | 0.38 EUR |
100+ | 0.18 EUR |
1000+ | 0.11 EUR |
5000+ | 0.084 EUR |
10000+ | 0.07 EUR |
25000+ | 0.062 EUR |
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Technische Details PDTD143EQAZ Nexperia
Description: TRANS PREBIAS NPN 50V 0.5A 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-XDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V, Supplier Device Package: DFN1010D-3, Grade: Automotive, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 325 mW, Frequency - Transition: 210 MHz, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 4.7 kOhms, Qualification: AEC-Q101.
Weitere Produktangebote PDTD143EQAZ nach Preis ab 0.05 EUR bis 0.05 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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PDTD143EQAZ | Hersteller : NXP Semiconductors |
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auf Bestellung 25000 Stücke: Lieferzeit 14-21 Tag (e) |
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PDTD143EQAZ | Hersteller : Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V Supplier Device Package: DFN1010D-3 Grade: Automotive Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 325 mW Frequency - Transition: 210 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms Qualification: AEC-Q101 |
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