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PDTD143EQAZ

PDTD143EQAZ Nexperia


PDTD113_123_143_114EQA_SER.pdf
Hersteller: Nexperia
Digital Transistors SOT1215 50V .5A NPN RET
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Technische Details PDTD143EQAZ Nexperia

Description: TRANS PREBIAS NPN 50V 0.5A 3DFN, Qualification: AEC-Q101, Resistor - Emitter Base (R2): 4.7 kOhms, Resistor - Base (R1): 4.7 kOhms, Frequency - Transition: 210 MHz, Power - Max: 325 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 500 mA, Grade: Automotive, Supplier Device Package: DFN1010D-3, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: 3-XDFN Exposed Pad, Packaging: Tape & Reel (TR).

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PDTD143EQAZ PDTD143EQAZ Hersteller : Nexperia USA Inc. PDTD113_123_143_114EQA_SER.pdf Description: TRANS PREBIAS NPN 50V 0.5A 3DFN
Qualification: AEC-Q101
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 210 MHz
Power - Max: 325 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Grade: Automotive
Supplier Device Package: DFN1010D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
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Im Einkaufswagen  Stück im Wert von  UAH