| Anzahl | Preis |
|---|---|
| 7+ | 0.41 EUR |
| 11+ | 0.28 EUR |
| 100+ | 0.18 EUR |
| 500+ | 0.11 EUR |
| 1000+ | 0.084 EUR |
| 3000+ | 0.07 EUR |
| 6000+ | 0.062 EUR |
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Technische Details PDTD143ET-QR Nexperia
Description: TRANS PREBIAS NPN 50V TO236AB, Qualification: AEC-Q101, Resistor - Emitter Base (R2): 4.7 kOhms, Resistor - Base (R1): 4.7 kOhms, Frequency - Transition: 225 MHz, Power - Max: 320 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 500 mA, Grade: Automotive, Supplier Device Package: TO-236AB, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote PDTD143ET-QR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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PDTD143ET-QR | Hersteller : Nexperia USA Inc. |
 Description: TRANS PREBIAS NPN 50V TO236ABQualification: AEC-Q101 Resistor - Emitter Base (R2): 4.7 kOhms Resistor - Base (R1): 4.7 kOhms Frequency - Transition: 225 MHz Power - Max: 320 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 500 mA Grade: Automotive Supplier Device Package: TO-236AB DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
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