PE4205M1Q_R1_00501 PanJit Semiconductor
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 25A; unidirectional; DFN1006-2; Ch: 1
Type of diode: TVS
Breakdown voltage: 6V
Max. forward impulse current: 25A
Semiconductor structure: unidirectional
Mounting: SMD
Max. off-state voltage: 5V
Leakage current: 1µA
Number of channels: 1
Case: DFN1006-2
Capacitance: 0.25nF
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Technische Details PE4205M1Q_R1_00501 PanJit Semiconductor
Category: Protection diodes - arrays, Description: Diode: TVS; 6V; 25A; unidirectional; DFN1006-2; Ch: 1, Type of diode: TVS, Breakdown voltage: 6V, Max. forward impulse current: 25A, Semiconductor structure: unidirectional, Mounting: SMD, Max. off-state voltage: 5V, Leakage current: 1µA, Number of channels: 1, Case: DFN1006-2, Capacitance: 0.25nF.