Produkte > PANJIT SEMICONDUCTOR > PE4312C2A-AU_R1_007A1

PE4312C2A-AU_R1_007A1 PanJit Semiconductor



Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 15.5V; 8.3A; 0.35kW; unidirectional; SOT23; Ch: 2
Type of diode: TVS
Breakdown voltage: 15.5V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 12V
Leakage current: 1µA
Number of channels: 2
Capacitance: 90pF
Peak pulse power dissipation: 0.35kW
Application: automotive industry
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Technische Details PE4312C2A-AU_R1_007A1 PanJit Semiconductor

Category: Protection diodes - arrays, Description: Diode: TVS; 15.5V; 8.3A; 0.35kW; unidirectional; SOT23; Ch: 2, Type of diode: TVS, Breakdown voltage: 15.5V, Max. forward impulse current: 8.3A, Semiconductor structure: unidirectional, Mounting: SMD, Case: SOT23, Max. off-state voltage: 12V, Leakage current: 1µA, Number of channels: 2, Capacitance: 90pF, Peak pulse power dissipation: 0.35kW, Application: automotive industry.