PEC11SD03M1Q_R1_00501 PanJit Semiconductor
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 3V
Breakdown voltage: 5.5V
Max. forward impulse current: 3.5A
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 0.19pF
Version: ESD
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 3V
Breakdown voltage: 5.5V
Max. forward impulse current: 3.5A
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 0.19pF
Version: ESD
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Technische Details PEC11SD03M1Q_R1_00501 PanJit Semiconductor
Category: Bidirectional TVS SMD diodes, Description: Diode: TVS; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape; ESD, Type of diode: TVS, Max. off-state voltage: 3V, Breakdown voltage: 5.5V, Max. forward impulse current: 3.5A, Semiconductor structure: bidirectional, Case: DFN1006-2, Mounting: SMD, Leakage current: 1µA, Kind of package: reel; tape, Capacitance: 0.19pF, Version: ESD.