PEMD18,115 NXP
Hersteller: NXPDescription: NXP - PEMD18,115 - INTEGRATED PASSIVE FILTERS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 164000 Stücke:
Lieferzeit 14-21 Tag (e)
Produktrezensionen
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Technische Details PEMD18,115 NXP
Description: TRANS PREBIAS 1NPN 1PNP SOT666, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 300mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 1µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V, Resistor - Base (R1): 4.7kOhms, Resistor - Emitter Base (R2): 10kOhms, Supplier Device Package: SOT-666, Part Status: Obsolete.
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PEMD18,115 | Hersteller : Nexperia USA Inc. |
Description: TRANS PREBIAS 1NPN 1PNP SOT666 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: SOT-666 Part Status: Obsolete |
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PEMD18,115 | Hersteller : Nexperia |
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