| Anzahl | Preis |
|---|---|
| 4000+ | 0.14 EUR |
| 16000+ | 0.13 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PEMH11,115 Nexperia
Description: TRANS PREBIAS 2NPN 50V SOT-666, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual), Power - Max: 300mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 1µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V, Resistor - Base (R1): 10kOhms, Resistor - Emitter Base (R2): 10kOhms, Supplier Device Package: SOT-666, Part Status: Not For New Designs.
Weitere Produktangebote PEMH11,115 nach Preis ab 0.12 EUR bis 0.7 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
PEMH11,115 | Hersteller : Nexperia USA Inc. |
 Description: TRANS PREBIAS 2NPN 50V SOT-666Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: SOT-666 Part Status: Not For New Designs |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
PEMH11,115 | Hersteller : Nexperia |
Digital Transistors PEMH11/SOT666/SOT6 |
auf Bestellung 2136 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
PEMH11,115 | Hersteller : Nexperia USA Inc. |
Description: TRANS PREBIAS 2NPN 50V SOT-666 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: SOT-666 Part Status: Not For New Designs |
auf Bestellung 7490 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
PEMH11,115 | Hersteller : Nexperia |
Trans Digital BJT NPN 50V 0.1A 300mW 6-Pin SOT-666 T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
PEMH11,115 | Hersteller : Nexperia |
Trans Digital BJT NPN 50V 0.1A 300mW 6-Pin SOT-666 T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
 |
PEMH11,115 | Hersteller : NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT666; R1: 10kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SOT666 Current gain: 30 Mounting: SMD Kind of package: reel; tape Frequency: 230MHz Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 10kΩ |
Produkt ist nicht verfügbar |