auf Bestellung 1600 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 800+ | 0.75 EUR |
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Technische Details PHB29N08T,118 Nexperia
Description: MOSFET N-CH 75V 27A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 27A (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 14A, 11V, Power Dissipation (Max): 88W (Tc), Vgs(th) (Max) @ Id: 5V @ 2mA, Supplier Device Package: D2PAK, Drive Voltage (Max Rds On, Min Rds On): 11V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 25 V.
Weitere Produktangebote PHB29N08T,118 nach Preis ab 0.76 EUR bis 3.38 EUR
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PHB29N08T,118 | Hersteller : Nexperia |
 Trans MOSFET N-CH 75V 27A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 1600 Stücke: Lieferzeit 14-21 Tag (e) |
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PHB29N08T,118 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 75V 27A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 14A, 11V Power Dissipation (Max): 88W (Tc) Vgs(th) (Max) @ Id: 5V @ 2mA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 11V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 25 V |
auf Bestellung 1600 Stücke: Lieferzeit 10-14 Tag (e) |
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PHB29N08T,118 | Hersteller : Nexperia |
MOSFETs PHB29N08T/SOT404/D2PAK |
auf Bestellung 5091 Stücke: Lieferzeit 10-14 Tag (e) |
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PHB29N08T,118 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 75V 27A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 14A, 11V Power Dissipation (Max): 88W (Tc) Vgs(th) (Max) @ Id: 5V @ 2mA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 11V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 25 V |
auf Bestellung 2192 Stücke: Lieferzeit 10-14 Tag (e) |
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PHB29N08T,118 | Hersteller : NEXPERIA |
Trans MOSFET N-CH 75V 27A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 2400 Stücke: Lieferzeit 14-21 Tag (e) |
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| PHB29N08T,118 | Hersteller : NEXPERIA |
Description: NEXPERIA - PHB29N08T,118 - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: Lead (27-Jun-2024) |
auf Bestellung 2600 Stücke: Lieferzeit 14-21 Tag (e) |
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PHB29N08T,118 | Hersteller : Nexperia |
Trans MOSFET N-CH 75V 27A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |