PHB29N08T,118 NXP Semiconductors
Hersteller: NXP Semiconductors
Description: NEXPERIA PHB29N08T - 27A, 75V, 0
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 14A, 11V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 11V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 25 V
Description: NEXPERIA PHB29N08T - 27A, 75V, 0
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 14A, 11V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 11V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 25 V
auf Bestellung 2600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
708+ | 0.67 EUR |
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Technische Details PHB29N08T,118 NXP Semiconductors
Description: NEXPERIA PHB29N08T - 27A, 75V, 0, Packaging: Bulk, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 27A (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 14A, 11V, Power Dissipation (Max): 88W (Tc), Vgs(th) (Max) @ Id: 5V @ 2mA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 11V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 25 V.
Weitere Produktangebote PHB29N08T,118 nach Preis ab 0.81 EUR bis 3.28 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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PHB29N08T,118 | Hersteller : Nexperia | Trans MOSFET N-CH 75V 27A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 1600 Stücke: Lieferzeit 14-21 Tag (e) |
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PHB29N08T,118 | Hersteller : Nexperia | Trans MOSFET N-CH 75V 27A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 1600 Stücke: Lieferzeit 14-21 Tag (e) |
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PHB29N08T,118 | Hersteller : Nexperia | MOSFET PHB29N08T/SOT404/D2PAK |
auf Bestellung 1524 Stücke: Lieferzeit 14-28 Tag (e) |
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PHB29N08T,118 | Hersteller : NEXPERIA | Trans MOSFET N-CH 75V 27A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 1600 Stücke: Lieferzeit 14-21 Tag (e) |
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PHB29N08T,118 | Hersteller : NEXPERIA |
Description: NEXPERIA - PHB29N08T,118 - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 |
auf Bestellung 14136 Stücke: Lieferzeit 14-21 Tag (e) |
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PHB29N08T,118 | Hersteller : Nexperia | Trans MOSFET N-CH 75V 27A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |