PHB32N06LT,118 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 34A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 20A, 10V
Power Dissipation (Max): 97W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V
| Anzahl | Preis |
|---|---|
| 800+ | 0.91 EUR |
| 1600+ | 0.84 EUR |
| 2400+ | 0.8 EUR |
| 4000+ | 0.76 EUR |
| 5600+ | 0.73 EUR |
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Produktbewertung abgeben
Technische Details PHB32N06LT,118 Nexperia USA Inc.
Description: MOSFET N-CH 60V 34A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 34A (Tc), Rds On (Max) @ Id, Vgs: 37mOhm @ 20A, 10V, Power Dissipation (Max): 97W (Tc), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 5V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V.
Weitere Produktangebote PHB32N06LT,118 nach Preis ab 0.86 EUR bis 2.87 EUR
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PHB32N06LT,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 24A; Idm: 136A; 97W Case: D2PAK; SOT404 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Gate charge: 17nC On-state resistance: 43mΩ Power dissipation: 97W Drain current: 24A Pulsed drain current: 136A Gate-source voltage: ±15V Drain-source voltage: 60V |
auf Bestellung 479 Stücke: Lieferzeit 14-21 Tag (e) |
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PHB32N06LT,118 | Nexperia |
MOSFETs PHB32N06LT/SOT404/D2PAK |
auf Bestellung 4865 Stücke: Lieferzeit 10-14 Tag (e) |
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PHB32N06LT,118 | Nexperia USA Inc. |
Description: MOSFET N-CH 60V 34A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 37mOhm @ 20A, 10V Power Dissipation (Max): 97W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 5V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V |
auf Bestellung 7457 Stücke: Lieferzeit 10-14 Tag (e) |
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| PHB32N06LT,118 |
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Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 24A; Idm: 136A; 97W
Case: D2PAK; SOT404
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 17nC
On-state resistance: 43mΩ
Power dissipation: 97W
Drain current: 24A
Pulsed drain current: 136A
Gate-source voltage: ±15V
Drain-source voltage: 60V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 24A; Idm: 136A; 97W
Case: D2PAK; SOT404
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 17nC
On-state resistance: 43mΩ
Power dissipation: 97W
Drain current: 24A
Pulsed drain current: 136A
Gate-source voltage: ±15V
Drain-source voltage: 60V
auf Bestellung 479 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 44+ | 1.66 EUR |
| 50+ | 1.44 EUR |
| 54+ | 1.34 EUR |
| 100+ | 1.29 EUR |
| 250+ | 1.16 EUR |
| PHB32N06LT,118 |
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Hersteller: Nexperia
MOSFETs PHB32N06LT/SOT404/D2PAK
MOSFETs PHB32N06LT/SOT404/D2PAK
auf Bestellung 4865 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.71 EUR |
| 10+ | 1.72 EUR |
| 100+ | 1.16 EUR |
| 500+ | 0.86 EUR |
| PHB32N06LT,118 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 34A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 20A, 10V
Power Dissipation (Max): 97W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V
Description: MOSFET N-CH 60V 34A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 20A, 10V
Power Dissipation (Max): 97W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V
auf Bestellung 7457 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.87 EUR |
| 10+ | 1.82 EUR |
| 100+ | 1.22 EUR |