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PHD13003C,126

PHD13003C,126 WeEn Semiconductors


PHD13003C.pdf
Hersteller: WeEn Semiconductors
Bipolar Transistors - BJT H-VOLT PWR BPT 700V 2 A
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Technische Details PHD13003C,126 WeEn Semiconductors

Description: TRANS NPN 400V 1.5A TO-92-3, Packaging: Tape & Box (TB), Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 1.5A, Current - Collector Cutoff (Max): 100µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 2V, Supplier Device Package: TO-92-3, Current - Collector (Ic) (Max): 1.5 A, Voltage - Collector Emitter Breakdown (Max): 400 V, Power - Max: 2.1 W.

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PHD13003C,126 PHD13003C,126 Hersteller : WeEn Semiconductors PHD13003C.pdf Description: TRANS NPN 400V 1.5A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 1.5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 2V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 2.1 W
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PHD13003C,126 PHD13003C,126 Hersteller : WeEn Semiconductors phd13003c.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 700V; 1.5A; 2.1W; TO92
Mounting: THT
Features of semiconductor devices: integrated anti-parallel diode
Type of transistor: NPN
Case: TO92
Collector current: 1.5A
Power dissipation: 2.1W
Current gain: 8...25
Collector-emitter voltage: 700V
Kind of package: Ammo Pack
Polarisation: bipolar
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