PHD13003C,126 WeEn Semiconductor(Hong Kong)Co.,Limited
Hersteller: WeEn Semiconductor(Hong Kong)Co.,LimitedTrans GP BJT NPN 400V 1.5A 2100mW 3-Pin SPT Ammo
auf Bestellung 3369 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1068+ | 0.14 EUR |
| 1104+ | 0.13 EUR |
| 2500+ | 0.12 EUR |
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Technische Details PHD13003C,126 WeEn Semiconductor(Hong Kong)Co.,Limited
Description: TRANS NPN 400V 1.5A TO-92-3, Packaging: Tape & Box (TB), Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 1.5A, Current - Collector Cutoff (Max): 100µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 2V, Supplier Device Package: TO-92-3, Current - Collector (Ic) (Max): 1.5 A, Voltage - Collector Emitter Breakdown (Max): 400 V, Power - Max: 2.1 W.
Weitere Produktangebote PHD13003C,126 nach Preis ab 0.14 EUR bis 0.54 EUR
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PHD13003C,126 | Hersteller : WeEn Semiconductors |
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auf Bestellung 22000 Stücke: Lieferzeit 10-14 Tag (e) |
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PHD13003C,126 | Hersteller : WeEn Semiconductors |
Bipolar Transistors - BJT H-VOLT PWR BPT 700V 2 A |
auf Bestellung 3834 Stücke: Lieferzeit 10-14 Tag (e) |
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PHD13003C,126 | Hersteller : Ween |
Trans GP BJT NPN 400V 1.5A 2100mW 3-Pin SPT Ammo |
Produkt ist nicht verfügbar |
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PHD13003C,126 | Hersteller : WeEn Semiconductors |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 700V; 1.5A; 2.1W; TO92 Collector-emitter voltage: 700V Current gain: 8...25 Collector current: 1.5A Type of transistor: NPN Power dissipation: 2.1W Polarisation: bipolar Kind of package: Ammo Pack Features of semiconductor devices: integrated anti-parallel diode Mounting: THT Case: TO92 Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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PHD13003C,126 | Hersteller : WeEn Semiconductors |
Description: TRANS NPN 400V 1.5A TO-92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 1.5A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 2V Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 2.1 W |
Produkt ist nicht verfügbar |
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PHD13003C,126 | Hersteller : WeEn Semiconductors |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 700V; 1.5A; 2.1W; TO92 Collector-emitter voltage: 700V Current gain: 8...25 Collector current: 1.5A Type of transistor: NPN Power dissipation: 2.1W Polarisation: bipolar Kind of package: Ammo Pack Features of semiconductor devices: integrated anti-parallel diode Mounting: THT Case: TO92 |
Produkt ist nicht verfügbar |