PHKD13N03LT,518 NEXPERIA

Description: MOSFET 2N-CH 30V 10.4A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.57W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 10.4A, Input Capacitance (Ciss) (Max) @ Vds: 752pF @ 15V, Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 10.7nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 8-SO.