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PIMN32PAS-QX

PIMN32PAS-QX Nexperia


Hersteller: Nexperia
Digital Transistors PIMN32PAS-Q/SOT1118/HUSON6
auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.94 EUR
10+0.58 EUR
100+0.28 EUR
1000+0.25 EUR
3000+0.19 EUR
9000+0.16 EUR
Mindestbestellmenge: 4
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Technische Details PIMN32PAS-QX Nexperia

Description: PIMN32PAS-Q/SOT1118/HUSON6, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased, Power - Max: 360mW, Current - Collector (Ic) (Max): 500mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V, Frequency - Transition: 210MHz, Resistor - Base (R1): 2.2kOhms, Resistor - Emitter Base (R2): 10kOhms, Supplier Device Package: DFN2020D-6, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote PIMN32PAS-QX

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
PIMN32PAS-QX Hersteller : Nexperia USA Inc. Description: PIMN32PAS-Q/SOT1118/HUSON6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased
Power - Max: 360mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Frequency - Transition: 210MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: DFN2020D-6
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PIMN32PAS-QX Hersteller : Nexperia USA Inc. Description: PIMN32PAS-Q/SOT1118/HUSON6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased
Power - Max: 360mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Frequency - Transition: 210MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: DFN2020D-6
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH