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PJA138K-AU_R1_000A1

PJA138K-AU_R1_000A1 Panjit International Inc.

PJA138K-AU.pdf
Hersteller: Panjit International Inc.
Description: SOT-23, MOSFET N-CHANNEL
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Grade: Automotive
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.071 EUR
6000+0.066 EUR
9000+0.054 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details PJA138K-AU_R1_000A1 Panjit International Inc.

Description: SOT-23, MOSFET N-CHANNEL, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V, Drain to Source Voltage (Vdss): 50 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Grade: Automotive, Supplier Device Package: SOT-23, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Power Dissipation (Max): 500mW (Ta), Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).

Weitere Produktangebote PJA138K-AU_R1_000A1 nach Preis ab 0.042 EUR bis 0.42 EUR

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PJA138K-AU_R1_000A1 PJA138K-AU_R1_000A1 PanJit Semiconductor PJA138K-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 1864 Stücke:
Lieferzeit 14-21 Tag (e)
313+0.23 EUR
794+0.09 EUR
1119+0.064 EUR
1471+0.049 EUR
1684+0.042 EUR
Mindestbestellmenge: 313 Stücke
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PJA138K-AU_R1_000A1 PJA138K-AU_R1_000A1 Panjit D92C180D47E69CA78976D60699D70D1CE948CFD1D9259D76E9961E5BD3B918FE.pdf MOSFETs 50V N-Channel Enhancement Mode MOSFETESD Protected
auf Bestellung 5039 Stücke:
Lieferzeit 10-14 Tag (e)
9+0.33 EUR
14+0.2 EUR
100+0.12 EUR
500+0.092 EUR
1000+0.081 EUR
3000+0.055 EUR
6000+0.051 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJA138K-AU_R1_000A1 PJA138K-AU_R1_000A1 Panjit International Inc. PJA138K-AU.pdf Description: SOT-23, MOSFET N-CHANNEL
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Grade: Automotive
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 24454 Stücke:
Lieferzeit 10-14 Tag (e)
42+0.42 EUR
61+0.29 EUR
126+0.14 EUR
500+0.12 EUR
1000+0.082 EUR
Mindestbestellmenge: 42 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJA138K-AU_R1_000A1 PJA138K-AU.pdf
PJA138K-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 1864 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
313+0.23 EUR
794+0.09 EUR
1119+0.064 EUR
1471+0.049 EUR
1684+0.042 EUR
Mindestbestellmenge: 313 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJA138K-AU_R1_000A1 D92C180D47E69CA78976D60699D70D1CE948CFD1D9259D76E9961E5BD3B918FE.pdf
PJA138K-AU_R1_000A1
Hersteller: Panjit
MOSFETs 50V N-Channel Enhancement Mode MOSFETESD Protected
auf Bestellung 5039 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
9+0.33 EUR
14+0.2 EUR
100+0.12 EUR
500+0.092 EUR
1000+0.081 EUR
3000+0.055 EUR
6000+0.051 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJA138K-AU_R1_000A1 PJA138K-AU.pdf
PJA138K-AU_R1_000A1
Hersteller: Panjit International Inc.
Description: SOT-23, MOSFET N-CHANNEL
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Grade: Automotive
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 24454 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
42+0.42 EUR
61+0.29 EUR
126+0.14 EUR
500+0.12 EUR
1000+0.082 EUR
Mindestbestellmenge: 42 Stücke
Im Einkaufswagen  Stück im Wert von  UAH