PJA138K-AU_R1_000A1 PanJit Semiconductor
Hersteller: PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Gate charge: 1nC
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Kind of channel: enhanced
Drain-source voltage: 50V
Drain current: 0.5A
On-state resistance: 4.5Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2840 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1430+ | 0.05 EUR |
| 1740+ | 0.041 EUR |
| 2110+ | 0.034 EUR |
| 2235+ | 0.032 EUR |
| 9000+ | 0.031 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PJA138K-AU_R1_000A1 PanJit Semiconductor
Description: SOT-23, MOSFET N-CHANNEL, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SOT-23, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 50 V, Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote PJA138K-AU_R1_000A1 nach Preis ab 0.032 EUR bis 0.42 EUR
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PJA138K-AU_R1_000A1 | Hersteller : PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Application: automotive industry Gate charge: 1nC Gate-source voltage: ±20V Pulsed drain current: 1.2A Kind of channel: enhanced Drain-source voltage: 50V Drain current: 0.5A On-state resistance: 4.5Ω Type of transistor: N-MOSFET Power dissipation: 0.5W Polarisation: unipolar |
auf Bestellung 2840 Stücke: Lieferzeit 14-21 Tag (e) |
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PJA138K-AU_R1_000A1 | Hersteller : Panjit International Inc. |
Description: SOT-23, MOSFET N-CHANNEL Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 21000 Stücke: Lieferzeit 10-14 Tag (e) |
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PJA138K-AU_R1_000A1 | Hersteller : Panjit |
MOSFET 50V N-Channel Enhancement Mode MOSFETESD Protected |
auf Bestellung 11032 Stücke: Lieferzeit 10-14 Tag (e) |
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PJA138K-AU_R1_000A1 | Hersteller : Panjit International Inc. |
Description: SOT-23, MOSFET N-CHANNEL Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 24454 Stücke: Lieferzeit 10-14 Tag (e) |
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