
PJA138K-AU_R2_000A1 PanJit Semiconductor
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Anzahl je Verpackung: 36000 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Anzahl je Verpackung: 36000 Stücke
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details PJA138K-AU_R2_000A1 PanJit Semiconductor
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 50V, Drain current: 0.5A, Pulsed drain current: 1.2A, Power dissipation: 0.5W, Case: SOT23, Gate-source voltage: ±20V, On-state resistance: 4.5Ω, Mounting: SMD, Gate charge: 1nC, Kind of package: reel; tape, Kind of channel: enhancement, Application: automotive industry, Anzahl je Verpackung: 36000 Stücke.
Weitere Produktangebote PJA138K-AU_R2_000A1
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
---|---|---|---|---|---|
![]() |
PJA138K-AU_R2_000A1 | Hersteller : Panjit |
![]() |
Produkt ist nicht verfügbar |
|
![]() |
PJA138K-AU_R2_000A1 | Hersteller : PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.5A Pulsed drain current: 1.2A Power dissipation: 0.5W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 4.5Ω Mounting: SMD Gate charge: 1nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |