Produkte > PANJIT INTERNATIONAL INC. > PJA3409_R1_00001
PJA3409_R1_00001

PJA3409_R1_00001 Panjit International Inc.


PJA3409.pdf Hersteller: Panjit International Inc.
Description: SOT-23, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 2.9A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 396 pF @ 15 V
auf Bestellung 99000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.15 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details PJA3409_R1_00001 Panjit International Inc.

Description: SOT-23, MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), Rds On (Max) @ Id, Vgs: 110mOhm @ 2.9A, 10V, Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: SOT-23, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 396 pF @ 15 V.

Weitere Produktangebote PJA3409_R1_00001 nach Preis ab 0.08 EUR bis 0.86 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
PJA3409_R1_00001 PJA3409_R1_00001 Hersteller : Panjit International Inc. PJA3409.pdf Description: SOT-23, MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 2.9A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 396 pF @ 15 V
auf Bestellung 108791 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.81 EUR
30+0.60 EUR
100+0.34 EUR
500+0.22 EUR
1000+0.17 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
PJA3409_R1_00001 PJA3409_R1_00001 Hersteller : Panjit PJA3409-1867412.pdf MOSFET 30V P-Channel Enhancement Mode MOSFET
auf Bestellung 10967 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.86 EUR
10+0.67 EUR
100+0.38 EUR
500+0.25 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
PJA3409_R1_00001 Hersteller : PanJit Semiconductor PJA3409.pdf PJA3409-R1 SMD P channel transistors
auf Bestellung 2390 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
278+0.26 EUR
861+0.08 EUR
911+0.08 EUR
9000+0.08 EUR
Mindestbestellmenge: 278
Im Einkaufswagen  Stück im Wert von  UAH