PJA3415A-AU_R1_000A1 PanJit Semiconductor
Hersteller: PanJit SemiconductorCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -18A; 1.25W; SOT23
Mounting: SMD
Pulsed drain current: -18A
Case: SOT23
Drain-source voltage: -20V
Drain current: -4.5A
On-state resistance: 88mΩ
Type of transistor: P-MOSFET
Application: automotive industry
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 10nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2840 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 186+ | 0.39 EUR |
| 252+ | 0.28 EUR |
| 477+ | 0.15 EUR |
| 642+ | 0.11 EUR |
| 9000+ | 0.10 EUR |
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Produktbewertung abgeben
Technische Details PJA3415A-AU_R1_000A1 PanJit Semiconductor
Description: SOT-23, MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), Rds On (Max) @ Id, Vgs: 48mOhm @ 4.5A, 4.5V, Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 1.3V @ 250µA, Supplier Device Package: SOT-23, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 10 V, Qualification: AEC-Q101.
Weitere Produktangebote PJA3415A-AU_R1_000A1 nach Preis ab 0.09 EUR bis 0.47 EUR
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PJA3415A-AU_R1_000A1 | Hersteller : PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -18A; 1.25W; SOT23 Mounting: SMD Pulsed drain current: -18A Case: SOT23 Drain-source voltage: -20V Drain current: -4.5A On-state resistance: 88mΩ Type of transistor: P-MOSFET Application: automotive industry Power dissipation: 1.25W Polarisation: unipolar Kind of package: reel; tape Gate charge: 10nC Kind of channel: enhancement Gate-source voltage: ±12V |
auf Bestellung 2840 Stücke: Lieferzeit 14-21 Tag (e) |
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PJA3415A-AU_R1_000A1 | Hersteller : Panjit International Inc. |
Description: SOT-23, MOSFET Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 48mOhm @ 4.5A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SOT-23 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 10 V Qualification: AEC-Q101 |
auf Bestellung 3112 Stücke: Lieferzeit 10-14 Tag (e) |
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PJA3415A-AU_R1_000A1 | Hersteller : Panjit |
MOSFETs 30V P-Channel Enhancement Mode MOSFET |
auf Bestellung 7235 Stücke: Lieferzeit 10-14 Tag (e) |
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PJA3415A-AU_R1_000A1 | Hersteller : Panjit International Inc. |
Description: SOT-23, MOSFET Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 48mOhm @ 4.5A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SOT-23 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 10 V Qualification: AEC-Q101 |
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PJA3415A-AU-R1-000A1 | Hersteller : Panjit | MOSFETs SOT-23/MOS/SOT/NFET-20TMP |
Produkt ist nicht verfügbar |