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PJA3419_R1_00001

PJA3419_R1_00001 Panjit International Inc.

PJA3419.pdf Hersteller: Panjit International Inc.
Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 602 pF @ 10 V
auf Bestellung 2940 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
30+0.6 EUR
42+ 0.42 EUR
100+ 0.21 EUR
500+ 0.17 EUR
1000+ 0.13 EUR
Mindestbestellmenge: 30
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Technische Details PJA3419_R1_00001 Panjit International Inc.

Description: 30V P-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 10V, Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: SOT-23, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 602 pF @ 10 V.

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PJA3419_R1_00001 PJA3419_R1_00001 Hersteller : Panjit PJA3419-1867218.pdf MOSFET 30V P-Channel Enhancement Mode MOSFET-ESD Protected
auf Bestellung 3000 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
55+0.95 EUR
71+ 0.74 EUR
125+ 0.42 EUR
500+ 0.28 EUR
1000+ 0.21 EUR
3000+ 0.16 EUR
9000+ 0.15 EUR
Mindestbestellmenge: 55
PJA3419_R1_00001 Hersteller : PanJit Semiconductor PJA3419.pdf PJA3419-R1 SMD P channel transistors
Produkt ist nicht verfügbar
PJA3419_R1_00001 PJA3419_R1_00001 Hersteller : Panjit International Inc. PJA3419.pdf Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 602 pF @ 10 V
Produkt ist nicht verfügbar