PJA3434_R1_00001 Panjit International Inc.
Hersteller: Panjit International Inc.Description: SOT-23, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 67 pF @ 10 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.089 EUR |
| 6000+ | 0.08 EUR |
| 9000+ | 0.055 EUR |
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Technische Details PJA3434_R1_00001 Panjit International Inc.
Description: SOT-23, MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 67 pF @ 10 V.
Weitere Produktangebote PJA3434_R1_00001 nach Preis ab 0.06 EUR bis 0.44 EUR
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PJA3434_R1_00001 | Hersteller : PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.5A; 500mW; SOT23 Drain current: 0.75A On-state resistance: 3Ω Type of transistor: N-MOSFET Power dissipation: 0.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 1.4nC Kind of channel: enhancement Gate-source voltage: ±10V Pulsed drain current: 1.5A Mounting: SMD Case: SOT23 Drain-source voltage: 20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3820 Stücke: Lieferzeit 7-14 Tag (e) |
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PJA3434_R1_00001 | Hersteller : PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.5A; 500mW; SOT23 Drain current: 0.75A On-state resistance: 3Ω Type of transistor: N-MOSFET Power dissipation: 0.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 1.4nC Kind of channel: enhancement Gate-source voltage: ±10V Pulsed drain current: 1.5A Mounting: SMD Case: SOT23 Drain-source voltage: 20V |
auf Bestellung 3820 Stücke: Lieferzeit 14-21 Tag (e) |
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PJA3434_R1_00001 | Hersteller : Panjit |
MOSFETs 20V N-Channel Enhancement Mode MOSFET |
auf Bestellung 8368 Stücke: Lieferzeit 10-14 Tag (e) |
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PJA3434_R1_00001 | Hersteller : Panjit International Inc. |
Description: SOT-23, MOSFET Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 750mA (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 67 pF @ 10 V |
auf Bestellung 10856 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJA3434_R1_00001 | Hersteller : PanJit |
20V N-Channel Enhancement Mode MOSFET |
auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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PJA3434-R1-00001 | Hersteller : Panjit |
MOSFETs SOT23 N CHAN 20V |
Produkt ist nicht verfügbar |