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PJA3434_R1_00001

PJA3434_R1_00001 PanJit Semiconductor

PJA3434.pdf Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.5A; 500mW; SOT23
Mounting: SMD
Drain current: 0.75A
Power dissipation: 0.5W
Polarisation: unipolar
Drain-source voltage: 20V
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.4nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 1.5A
On-state resistance: 3Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2670 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
715+0.1 EUR
910+ 0.079 EUR
1025+ 0.07 EUR
1105+ 0.065 EUR
1170+ 0.061 EUR
3000+ 0.059 EUR
Mindestbestellmenge: 715
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Produktbewertung abgeben

Technische Details PJA3434_R1_00001 PanJit Semiconductor

Description: SOT-23, MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 67 pF @ 10 V.

Weitere Produktangebote PJA3434_R1_00001 nach Preis ab 0.061 EUR bis 0.87 EUR

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PJA3434_R1_00001 PJA3434_R1_00001 Hersteller : PanJit Semiconductor PJA3434.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.5A; 500mW; SOT23
Mounting: SMD
Drain current: 0.75A
Power dissipation: 0.5W
Polarisation: unipolar
Drain-source voltage: 20V
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.4nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 1.5A
On-state resistance: 3Ω
Type of transistor: N-MOSFET
auf Bestellung 2670 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
715+0.1 EUR
910+ 0.079 EUR
1025+ 0.07 EUR
1105+ 0.065 EUR
1170+ 0.061 EUR
Mindestbestellmenge: 715
PJA3434_R1_00001 PJA3434_R1_00001 Hersteller : Panjit International Inc. PJA3434.pdf Description: SOT-23, MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 67 pF @ 10 V
auf Bestellung 3956 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
31+0.86 EUR
45+ 0.59 EUR
100+ 0.29 EUR
500+ 0.24 EUR
1000+ 0.17 EUR
Mindestbestellmenge: 31
PJA3434_R1_00001 PJA3434_R1_00001 Hersteller : Panjit PJA3434-1867299.pdf MOSFET 20V N-Channel Enhancement Mode MOSFET
auf Bestellung 8237 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
60+0.87 EUR
88+ 0.6 EUR
213+ 0.24 EUR
1000+ 0.17 EUR
3000+ 0.13 EUR
9000+ 0.11 EUR
24000+ 0.1 EUR
Mindestbestellmenge: 60
PJA3434_R1_00001 Hersteller : PanJit PJA3434.pdf 20V N-Channel Enhancement Mode MOSFET
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
3000+0.16 EUR
Mindestbestellmenge: 3000
PJA3434_R1_00001 PJA3434_R1_00001 Hersteller : Panjit International Inc. PJA3434.pdf Description: SOT-23, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 67 pF @ 10 V
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