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PJA3435_R1_00001

PJA3435_R1_00001 PanJit Semiconductor

PJA3435.pdf Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23
Mounting: SMD
Drain current: -0.5A
Power dissipation: 0.5W
Polarisation: unipolar
Drain-source voltage: -20V
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.4nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -1A
On-state resistance: 6Ω
Type of transistor: P-MOSFET
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2980 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
715+0.1 EUR
830+ 0.087 EUR
1005+ 0.071 EUR
1065+ 0.067 EUR
3000+ 0.065 EUR
Mindestbestellmenge: 715
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Technische Details PJA3435_R1_00001 PanJit Semiconductor

Description: 30V P-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V.

Weitere Produktangebote PJA3435_R1_00001 nach Preis ab 0.067 EUR bis 0.67 EUR

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Preis ohne MwSt
PJA3435_R1_00001 PJA3435_R1_00001 Hersteller : PanJit Semiconductor PJA3435.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23
Mounting: SMD
Drain current: -0.5A
Power dissipation: 0.5W
Polarisation: unipolar
Drain-source voltage: -20V
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.4nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -1A
On-state resistance: 6Ω
Type of transistor: P-MOSFET
auf Bestellung 2980 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
715+0.1 EUR
830+ 0.087 EUR
1005+ 0.071 EUR
1065+ 0.067 EUR
Mindestbestellmenge: 715
PJA3435_R1_00001 PJA3435_R1_00001 Hersteller : Panjit PJA3435-1867220.pdf MOSFET 30V P-Channel Enhancement Mode MOSFET-ESD Protected
auf Bestellung 2408 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+0.67 EUR
10+ 0.5 EUR
100+ 0.28 EUR
1000+ 0.14 EUR
3000+ 0.12 EUR
9000+ 0.1 EUR
24000+ 0.093 EUR
Mindestbestellmenge: 5
PJA3435_R1_00001 PJA3435_R1_00001 Hersteller : Panjit International Inc. PJA3435.pdf Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V
auf Bestellung 2313 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
27+0.67 EUR
38+ 0.47 EUR
100+ 0.24 EUR
500+ 0.19 EUR
1000+ 0.14 EUR
Mindestbestellmenge: 27
PJA3435_R1_00001 PJA3435_R1_00001 Hersteller : Panjit International Inc. PJA3435.pdf Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V
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