Produkte > PANJIT SEMICONDUCTOR > PJA3436-AU_R1_000A1
PJA3436-AU_R1_000A1

PJA3436-AU_R1_000A1 PanJit Semiconductor

PJA3436-AU.pdf Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23
Mounting: SMD
Application: automotive industry
Drain current: 1.2A
Power dissipation: 1.25W
Polarisation: unipolar
Drain-source voltage: 20V
Kind of package: reel; tape
Case: SOT23
Gate charge: 0.9nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 4.8A
On-state resistance: 0.9Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
715+0.1 EUR
910+ 0.079 EUR
1025+ 0.07 EUR
1105+ 0.065 EUR
1170+ 0.061 EUR
3000+ 0.059 EUR
Mindestbestellmenge: 715
Produktrezensionen
Produktbewertung abgeben

Technische Details PJA3436-AU_R1_000A1 PanJit Semiconductor

Description: SOT-23, MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta), Rds On (Max) @ Id, Vgs: 380mOhm @ 1.2A, 4.5V, Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 10 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote PJA3436-AU_R1_000A1 nach Preis ab 0.059 EUR bis 0.56 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
PJA3436-AU_R1_000A1 PJA3436-AU_R1_000A1 Hersteller : PanJit Semiconductor PJA3436-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23
Mounting: SMD
Application: automotive industry
Drain current: 1.2A
Power dissipation: 1.25W
Polarisation: unipolar
Drain-source voltage: 20V
Kind of package: reel; tape
Case: SOT23
Gate charge: 0.9nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 4.8A
On-state resistance: 0.9Ω
Type of transistor: N-MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
715+0.1 EUR
910+ 0.079 EUR
1025+ 0.07 EUR
1105+ 0.065 EUR
1170+ 0.061 EUR
3000+ 0.059 EUR
Mindestbestellmenge: 715
PJA3436-AU_R1_000A1 PJA3436-AU_R1_000A1 Hersteller : Panjit International Inc. PJA3436-AU.pdf Description: SOT-23, MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 1.2A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4449 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
34+0.53 EUR
50+ 0.36 EUR
102+ 0.17 EUR
500+ 0.14 EUR
1000+ 0.1 EUR
Mindestbestellmenge: 34
PJA3436-AU_R1_000A1 PJA3436-AU_R1_000A1 Hersteller : Panjit PJA3436_AU-2887604.pdf MOSFET 20V N-Channel Enhancement Mode MOSFET-ESD Protected
auf Bestellung 6181 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+0.56 EUR
10+ 0.47 EUR
100+ 0.25 EUR
500+ 0.16 EUR
1000+ 0.11 EUR
3000+ 0.086 EUR
9000+ 0.072 EUR
Mindestbestellmenge: 5
PJA3436-AU_R1_000A1 PJA3436-AU_R1_000A1 Hersteller : Panjit International Inc. PJA3436-AU.pdf Description: SOT-23, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 1.2A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar