| Anzahl | Privatkunde |
|---|---|
| 4+ | 0.79 EUR |
| 10+ | 0.48 EUR |
| 100+ | 0.31 EUR |
| 500+ | 0.23 EUR |
| 1000+ | 0.2 EUR |
| 3000+ | 0.18 EUR |
| 6000+ | 0.15 EUR |
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
4 Stücke
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Technische Details PJA3460-AU_R1_000A1 Panjit
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 2.5A; Idm: 10A; 1.25W; SOT23, Mounting: SMD, Pulsed drain current: 10A, Power dissipation: 1.25W, Gate charge: 9.3nC, Polarisation: unipolar, Drain current: 2.5A, Kind of channel: enhancement, Drain-source voltage: 60V, Application: automotive industry, Type of transistor: N-MOSFET, Gate-source voltage: ±20V, Kind of package: reel; tape, Case: SOT23, On-state resistance: 90mΩ.
Weitere Produktangebote PJA3460-AU_R1_000A1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
PJA3460-AU_R1_000A1 | PanJit |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 2.5A; Idm: 10A; 1.25W; SOT23 Mounting: SMD Pulsed drain current: 10A Power dissipation: 1.25W Gate charge: 9.3nC Polarisation: unipolar Drain current: 2.5A Kind of channel: enhancement Drain-source voltage: 60V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SOT23 On-state resistance: 90mΩ |
auf Bestellung 678 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| PJA3460-AU_R1_000A1 |
Hersteller: PanJit
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.5A; Idm: 10A; 1.25W; SOT23
Mounting: SMD
Pulsed drain current: 10A
Power dissipation: 1.25W
Gate charge: 9.3nC
Polarisation: unipolar
Drain current: 2.5A
Kind of channel: enhancement
Drain-source voltage: 60V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT23
On-state resistance: 90mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.5A; Idm: 10A; 1.25W; SOT23
Mounting: SMD
Pulsed drain current: 10A
Power dissipation: 1.25W
Gate charge: 9.3nC
Polarisation: unipolar
Drain current: 2.5A
Kind of channel: enhancement
Drain-source voltage: 60V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT23
On-state resistance: 90mΩ
auf Bestellung 678 Stücke:
Lieferzeit 14-21 Tag (e)