PJC7407_R1_00001 PanJit Semiconductor
Hersteller: PanJit SemiconductorCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.3A; Idm: -5.2A; 350mW
On-state resistance: 0.2Ω
Type of transistor: P-MOSFET
Power dissipation: 0.35W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 5.4nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -5.2A
Mounting: SMD
Case: SOT323
Drain-source voltage: -20V
Drain current: -1.3A
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2985 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 365+ | 0.2 EUR |
| 585+ | 0.12 EUR |
| 650+ | 0.11 EUR |
| 795+ | 0.09 EUR |
| 835+ | 0.086 EUR |
| 9000+ | 0.082 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PJC7407_R1_00001 PanJit Semiconductor
Description: SOT-323, MOSFET, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta), Rds On (Max) @ Id, Vgs: 125mOhm @ 1.3A, 4.5V, Power Dissipation (Max): 350mW (Ta), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: SOT-323, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 416 pF @ 10 V.
Weitere Produktangebote PJC7407_R1_00001 nach Preis ab 0.086 EUR bis 1.04 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
PJC7407_R1_00001 | Hersteller : PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -1.3A; Idm: -5.2A; 350mW On-state resistance: 0.2Ω Type of transistor: P-MOSFET Power dissipation: 0.35W Polarisation: unipolar Kind of package: reel; tape Gate charge: 5.4nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -5.2A Mounting: SMD Case: SOT323 Drain-source voltage: -20V Drain current: -1.3A |
auf Bestellung 2985 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
PJC7407_R1_00001 | Hersteller : Panjit International Inc. |
Description: SOT-323, MOSFET Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta) Rds On (Max) @ Id, Vgs: 125mOhm @ 1.3A, 4.5V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 416 pF @ 10 V |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
|
||||||||||||||||
|
|
PJC7407_R1_00001 | Hersteller : Panjit International Inc. |
Description: SOT-323, MOSFET Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta) Rds On (Max) @ Id, Vgs: 125mOhm @ 1.3A, 4.5V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 416 pF @ 10 V |
auf Bestellung 37266 Stücke: Lieferzeit 21-28 Tag (e) |
|
||||||||||||||||
 |
PJC7407_R1_00001 | Hersteller : Panjit |
MOSFET 20V P-Channel Enhancement Mode MOSFET |
auf Bestellung 156673 Stücke: Lieferzeit 14-28 Tag (e) |
|