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PJC7428_R1_00001

PJC7428_R1_00001 Panjit International Inc.


PJC7428.pdf Hersteller: Panjit International Inc.
Description: SOT-323, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 300mA, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 10 V
auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.065 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details PJC7428_R1_00001 Panjit International Inc.

Description: SOT-323, MOSFET, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 300mA (Ta), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 300mA, 4.5V, Power Dissipation (Max): 350mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-323, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 10 V.

Weitere Produktangebote PJC7428_R1_00001 nach Preis ab 0.072 EUR bis 0.32 EUR

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PJC7428_R1_00001 PJC7428_R1_00001 Hersteller : PanJit Semiconductor PJC7428.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 0.6A; 350mW; SOT323
Case: SOT323
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 0.9nC
On-state resistance:
Drain current: 0.3A
Power dissipation: 0.35W
Pulsed drain current: 0.6A
Gate-source voltage: ±10V
Drain-source voltage: 30V
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
278+0.26 EUR
463+0.15 EUR
734+0.098 EUR
872+0.082 EUR
989+0.072 EUR
Mindestbestellmenge: 278
Im Einkaufswagen  Stück im Wert von  UAH
PJC7428_R1_00001 PJC7428_R1_00001 Hersteller : PanJit Semiconductor PJC7428.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 0.6A; 350mW; SOT323
Case: SOT323
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 0.9nC
On-state resistance:
Drain current: 0.3A
Power dissipation: 0.35W
Pulsed drain current: 0.6A
Gate-source voltage: ±10V
Drain-source voltage: 30V
Kind of package: reel; tape
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
463+0.15 EUR
734+0.098 EUR
872+0.082 EUR
989+0.072 EUR
Mindestbestellmenge: 278
Im Einkaufswagen  Stück im Wert von  UAH
PJC7428_R1_00001 PJC7428_R1_00001 Hersteller : Panjit International Inc. PJC7428.pdf Description: SOT-323, MOSFET
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 300mA, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 10 V
auf Bestellung 8217 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
91+0.19 EUR
147+0.12 EUR
500+0.088 EUR
1000+0.077 EUR
Mindestbestellmenge: 56
Im Einkaufswagen  Stück im Wert von  UAH