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PJC7428_R1_00001

PJC7428_R1_00001 Panjit International Inc.

PJC7428.pdf
Hersteller: Panjit International Inc.
Description: SOT-323, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 300mA, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 10 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.1 EUR
9000+0.087 EUR
Mindestbestellmenge: 3000 Stücke
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Technische Details PJC7428_R1_00001 Panjit International Inc.

Description: SOT-323, MOSFET, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 300mA (Ta), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 300mA, 4.5V, Power Dissipation (Max): 350mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-323, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 10 V.

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PJC7428_R1_00001 PJC7428_R1_00001 Panjit 17B109871FC853CD8E33D358A78544DB99AA2D6F2D0E6DA709604EFE7704D4A6.pdf MOSFETs 30V P-Channel Enhancement Mode MOSFET
auf Bestellung 3072 Stücke:
Lieferzeit 10-14 Tag (e)
7+0.5 EUR
11+0.31 EUR
100+0.19 EUR
500+0.14 EUR
1000+0.12 EUR
6000+0.12 EUR
Mindestbestellmenge: 7 Stücke
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PJC7428_R1_00001 PJC7428_R1_00001 Panjit International Inc. PJC7428.pdf Description: SOT-323, MOSFET
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 300mA, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 10 V
auf Bestellung 9938 Stücke:
Lieferzeit 10-14 Tag (e)
42+0.5 EUR
69+0.31 EUR
96+0.21 EUR
111+0.19 EUR
500+0.14 EUR
Mindestbestellmenge: 42 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJC7428_R1_00001 PJC7428_R1_00001 PanJit Semiconductor PJC7428.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 0.6A; 350mW; SOT323
Mounting: SMD
Pulsed drain current: 0.6A
Power dissipation: 0.35W
Gate charge: 0.9nC
Polarisation: unipolar
Drain current: 0.3A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±10V
Kind of package: reel; tape
Case: SOT323
On-state resistance: 4Ω
auf Bestellung 2750 Stücke:
Lieferzeit 14-21 Tag (e)
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PJC7428_R1_00001 17B109871FC853CD8E33D358A78544DB99AA2D6F2D0E6DA709604EFE7704D4A6.pdf
PJC7428_R1_00001
Hersteller: Panjit
MOSFETs 30V P-Channel Enhancement Mode MOSFET
auf Bestellung 3072 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+0.5 EUR
11+0.31 EUR
100+0.19 EUR
500+0.14 EUR
1000+0.12 EUR
6000+0.12 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJC7428_R1_00001 PJC7428.pdf
PJC7428_R1_00001
Hersteller: Panjit International Inc.
Description: SOT-323, MOSFET
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 300mA, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 10 V
auf Bestellung 9938 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
42+0.5 EUR
69+0.31 EUR
96+0.21 EUR
111+0.19 EUR
500+0.14 EUR
Mindestbestellmenge: 42 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJC7428_R1_00001 PJC7428.pdf
PJC7428_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 0.6A; 350mW; SOT323
Mounting: SMD
Pulsed drain current: 0.6A
Power dissipation: 0.35W
Gate charge: 0.9nC
Polarisation: unipolar
Drain current: 0.3A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±10V
Kind of package: reel; tape
Case: SOT323
On-state resistance: 4Ω
auf Bestellung 2750 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH