PJC7428_R1_00001 Panjit International Inc.
Hersteller: Panjit International Inc.
Description: SOT-323, MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: SOT-323
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 300mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
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Technische Details PJC7428_R1_00001 Panjit International Inc.
Description: SOT-323, MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Part Status: Active, Supplier Device Package: SOT-323, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 350mW (Ta), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 300mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 300mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323, Packaging: Tape & Reel (TR).
Weitere Produktangebote PJC7428_R1_00001 nach Preis ab 0.072 EUR bis 0.32 EUR
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PJC7428_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 0.6A; 350mW; SOT323 Mounting: SMD Case: SOT323 Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Pulsed drain current: 0.6A Drain current: 0.3A Gate charge: 0.9nC On-state resistance: 4Ω Power dissipation: 0.35W Gate-source voltage: ±10V |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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PJC7428_R1_00001 | Panjit International Inc. |
Description: SOT-323, MOSFET Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Part Status: Active Supplier Device Package: SOT-323 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 350mW (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 300mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Cut Tape (CT) |
auf Bestellung 8217 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJC7428_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 0.6A; 350mW; SOT323
Mounting: SMD
Case: SOT323
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 0.6A
Drain current: 0.3A
Gate charge: 0.9nC
On-state resistance: 4Ω
Power dissipation: 0.35W
Gate-source voltage: ±10V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 0.6A; 350mW; SOT323
Mounting: SMD
Case: SOT323
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 0.6A
Drain current: 0.3A
Gate charge: 0.9nC
On-state resistance: 4Ω
Power dissipation: 0.35W
Gate-source voltage: ±10V
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 278+ | 0.26 EUR |
| 463+ | 0.15 EUR |
| 734+ | 0.098 EUR |
| 872+ | 0.082 EUR |
| 989+ | 0.072 EUR |
| PJC7428_R1_00001 |
|
Hersteller: Panjit International Inc.
Description: SOT-323, MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: SOT-323
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 300mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Description: SOT-323, MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: SOT-323
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 300mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
auf Bestellung 8217 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 56+ | 0.32 EUR |
| 91+ | 0.19 EUR |
| 147+ | 0.12 EUR |
| 500+ | 0.088 EUR |
| 1000+ | 0.077 EUR |