PJD10P10A_L2_00001 Panjit International Inc.

Description: 100V P-CHANNEL MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 1419 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: TO-252AA, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 2W (Ta), 54W (Tc), Rds On (Max) @ Id, Vgs: 210mOhm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 10A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).